Autor(es): Centeno, Pedro ; Alexandre, Miguel ; Neves, Filipe ; Fortunato, Elvira ; Martins, Rodrigo ; Águas, Hugo ; Mendes, Manuel Joao
Data: 2022
Identificador Persistente: http://hdl.handle.net/10400.9/3966
Origem: Repositório do LNEG
Assunto(s): Photovoltaic materials; Thin-film photovoltaic; Semiconductors; Copper; Arsenic; Silicon solar cells; Raw materials
ABSTRACT: he inexorable increase of energy demand and the efficiency bottleneck of monocrystalline silicon solar cell technology is promoting the research and development of alternative photovoltaic materials. Copper-arsenic-sulfide (CAS) compounds are still rather unexplored in the literature, yet they have been regarded as promising candidates for use as p-type absorber in solar cells, owing to their broad raw material availability, suitable bandgap and high absorption coefficient. Here, a comprehensive study is presented on the structural and optoelectronic properties of CAS thin-films deposited via radio-frequency magnetron co-sputtering, using a commercial Cu target together with a Cu-As-S target with material obtained from local resources, specifically from mines in the Portuguese region of the Iberian Pyrite Belt. Raman and X-ray diffraction analysis confirm that the use of two targets results in films with pronounced stoichiometry gradients, suggesting a transition from amorphous CAS compounds to crystalline djurleite (Cu31S16), with the increasing proximity to the Cu target. Resistivity values from 4.7 m ohm center dot cm to 17.4 ohm center dot cm are obtained, being the lowest resistive films, those with pronounced sub-bandgap free-carrier absorption. The bandgap values range from 2.20 to 2.65 eV, indicating promising application as wide-bandgap semiconductors in third-generation (e.g., multi-junction) photovoltaic devices.
