Autor(es): Kumar, Rajesh ; Joanni, Ednan ; Savu, Raluca ; Pereira, Matheus S. [UNESP] ; Singh, Rajesh K. ; Constantino, Carlos J. L. [UNESP] ; Kubota, Lauro T. ; Matsuda, Atsunori ; Moshkalev, Stanislav A.
Data: 2019
Identificador Persistente: http://hdl.handle.net/11449/185841
Origem: Oasisbr
Assunto(s): GO paper; Pulsed laser; Direct laser writing; mu-supercapacitors; Areal capacitance; Cycling stability
Made available in DSpace on 2019-10-04T12:39:06Z (GMT). No. of bitstreams: 0 Previous issue date: 2019-07-15
Japan Society for the Promotion of Science, Japan
JSPS KAKENHI
Fundação de Amparo à Pesquisa do Estado de São Paulo (FAPESP)
Conselho Nacional de Desenvolvimento Científico e Tecnológico (CNPq)
Coordenação de Aperfeiçoamento de Pessoal de Nível Superior (CAPES)
This article presents results of a pulsed UV laser method for the simultaneous reduction of graphite oxide (GO) and patterning of reduced graphene oxide (rGO). This direct laser writing method was applied to the fabrication of graphene-based, in-plane interdigitated micro-supercapacitors (mu-SCs), prepared on free-standing GO paper (10 mu m thick). The electrochemical performance of mu-SCs was studied using two different electrolytes (KOH and NaCl). The results from cyclic voltammetry measurements exhibited typical electrical double layer behavior, with specific capacitances of 9.3 mu F/cm(2) and 13.8 mu F/cm(2) (at a scan rate of 10 mV/s) for KOH and NaCl electrolytes, respectively. The mu-SCs exhibited good performance, with retention of 95% of the original capacitance values after 3400 charge-discharge cycles. When compared to devices obtained by conventional lithographic techniques, the laser fabrication of planar mu-SCs is faster, cost-effective and scalable. We believe this one-step and environmentally friendly laser-assisted method to be a good alternative for the fabrication of flexible energy storage devices. (C) 2019 Elsevier Ltd. All rights reserved.
Toyohashi Univ Technol, Dept Elect & Elect Informat Engn, 1-1 Hibarigaoka,Tempaku Cho, Toyohashi, Aichi 4418580, Japan
Ctr Informat Technol Renato Archer CTI, BR-13069901 Campinas, SP, Brazil
Univ Campinas UNICAMP, Ctr Semicond Components & Nanotechnol CCS Nano, BR-13083870 Campinas, SP, Brazil
Sao Paulo State Univ, Dept Phys, Fac Sci & Technol, BR-19060900 Presidente Prudente, SP, Brazil
CUHP, Sch Phys & Mat Sci, Dharamshala 176215, HP, India
Univ Campinas UNICAMP, Inst Chem, Dept Analyt Chem, POB 6154, BR-13084974 Campinas, SP, Brazil
Sao Paulo State Univ, Dept Phys, Fac Sci & Technol, BR-19060900 Presidente Prudente, SP, Brazil
Japan Society for the Promotion of Science, Japan: P18063
JSPS KAKENHI: 18H03841
JSPS KAKENHI: 18F18063
FAPESP: 2017/22186-0
FAPESP: 2013/14262-7
