Effect of the deposition rate on ITO thin films properties prepared by ion beam assisted deposition (IBAD) technique

• Autor(es): Meng Lijian ; Teixeira, Vasco M. P. ; Santos, M. P. dos
• Data: 2010
• Identificador Persistente: https://hdl.handle.net/1822/13618
• Origem: RepositóriUM - Universidade do Minho
• Assunto(s): Electrical properties; Ion-assisted deposition structure; Structure; ITO; Optical properties
• Tipo de Documento: Artigo científico
• Idioma: Inglês
• Contribuidor(es): Universidade do Minho

Descrição

Indium tin oxide (ITO) thin films have been deposited onto glass substrates at room temperature by ion beam assisted deposition technique at different deposition rates (0.1 -- 0.3 nm/s). The effects of the deposition rate on the structural, optical and electrical properties of the deposited films have been studied. The optical constants of the deposited films were calculated by fitting the transmittance spectra using the semi-quantum model. Considering the application for the electromagnetic wave shielding which needs a high IR reflectance, the optimising deposition rate is 0.2 nm/s. The films prepared at this deposition rate shows a relative high IR reflectance (60%), a good electrical conductivity (5 x 10-3 -cm), and a reasonable transmittance in the visible region (over 80%).