Author(s): Pereira, Sérgio Manuel de Sousa ; Martins, Manuel António ; Trindade, Tito ; Watson, Ian M. ; Zhu, Diane ; Humphreys, Colin J.
Date: 2008
Persistent ID: http://hdl.handle.net/10773/6223
Origin: RIA - Repositório Institucional da Universidade de Aveiro
Subject(s): Epitaxial growth; Light-emitting materials; Nanocrystals; Surface patterning
Spontaneously formed nano-pits are exploited to effectively control the incorporation of gold nanocrystals (NCs) at the surface of light emitting InGaN/GaN heterostructures. Nano- engineering either the NCs size, or pit size, allows the number of NCs incorporated in each pit to be controlled, thus enabling research of well-defined assemblies of few gold NCs using an optically and electrically active substrate (see figure). The development of new nano-devices based on such hybrid nanostructures is briefly discussed.
