22 documents found, page 1 of 3
OPPOSITE TRENDS BETWEEN DIGITAL AND ANALOG PERFORMANCE FOR DIFFERENT TFET TECHN...
Agopian, P. G. D. [UNESP]; Bordallo, C.; Martino, J. A.; Rooyackers, R.; Simoen, E.; Collaert, N.; Claeys, C.; Huang, R.; Wu, H.; Lin, Q.; Liang, S.Made available in DSpace on 2022-04-28T17:20:27Z (GMT). No. of bitstreams: 0 Previous issue date: 2018-01-01; Conselho Nacional de Desenvolvimento Científico e Tecnológico (CNPq); Fundação de Amparo à Pesquisa do Estado de São Paulo (FAPESP); imec's Logic Device Program and its Core Partners; Different Tunnel-FET technologies are analyzed in terms of digital and analog figures of merit. The digital figure of me...
New method for self-heating estimation using only DC measurements
Mori, C. A. B.; Agopian, P. G. D. [UNESP]; Martino, J. A.; Gamiz, F.; Sverdlov, V; Sampedro, C.; Donetti, L.Made available in DSpace on 2021-06-25T11:22:53Z (GMT). No. of bitstreams: 0 Previous issue date: 2018-01-01; Conselho Nacional de Desenvolvimento Científico e Tecnológico (CNPq); Fundação de Amparo à Pesquisa do Estado de São Paulo (FAPESP); This paper reports a new method for estimating the thermal resistance of a device using the inverse of the transistor efficiency as a function of the power applied to the ...
Experimental silicon tunnel-FET device model applied to design a Gm-C filter
Rangel, R. S.; Agopian, P. G. D. [UNESP]; Martino, J. A.Made available in DSpace on 2020-12-10T17:40:33Z (GMT). No. of bitstreams: 0 Previous issue date: 2020-09-01; Conselho Nacional de Desenvolvimento Científico e Tecnológico (CNPq); This work presents the design of a Gm-C filter using experimental data of a silicon tunneling field effect transistors (TFET) device. The application takes advantage of the low g(m)of a Si TFET device, resulting in an optimized low cu...
Rebound effect on Charged Based Bio-TFETs for different biomolecules
Macambira, C. N.; Agopian, P. G. D. [UNESP]; Martino, J. A.; IEEEMade available in DSpace on 2020-12-10T17:58:55Z (GMT). No. of bitstreams: 0 Previous issue date: 2019-01-01; Conselho Nacional de Desenvolvimento Científico e Tecnológico (CNPq); Coordenação de Aperfeiçoamento de Pessoal de Nível Superior (CAPES); Fundação de Amparo à Pesquisa do Estado de São Paulo (FAPESP); In this work, the charged biomolecules with different permittivity (epsilon) localized on the drain un...
Proposal of a p-type Back-Enhanced Tunnel Field Effect Transistor
Mori, C. A. B.; Agopian, P. G. D. [UNESP]; Martino, J. A.; IEEEMade available in DSpace on 2020-12-10T17:58:55Z (GMT). No. of bitstreams: 0 Previous issue date: 2019-01-01; Fundação de Amparo à Pesquisa do Estado de São Paulo (FAPESP); Conselho Nacional de Desenvolvimento Científico e Tecnológico (CNPq); In this paper we propose a new p-type Tunnel Field Effect Transistor based on the planar Back-Enhanced structure (BE-pTFET), by removing the p-type drain doping and using ...
Performance evaluation of Tunnel-FET basic amplifier circuits
Rangel, R. S.; Agopian, P. G. D. [UNESP]; Martino, J. A.; Murphy, R. S.Made available in DSpace on 2019-10-04T12:14:12Z (GMT). No. of bitstreams: 0 Previous issue date: 2019-01-01; Fundação de Amparo à Pesquisa do Estado de São Paulo (FAPESP); Conselho Nacional de Desenvolvimento Científico e Tecnológico (CNPq); This work analyzes the performance of measured Tunneling Field-Effect Transistors (TFET) when applied to analog circuits. The method uses a look-up table based behavioral ...
Impact of process and device dimensions on Bio-TFET Sensitivity
Macambira, C. N.; Agopian, P. G. D. [UNESP]; Martino, J. A.; IEEEMade available in DSpace on 2019-10-04T19:12:05Z (GMT). No. of bitstreams: 0 Previous issue date: 2018-01-01; Fundação de Amparo à Pesquisa do Estado de São Paulo (FAPESP); Conselho Nacional de Desenvolvimento Científico e Tecnológico (CNPq); Coordenação de Aperfeiçoamento de Pessoal de Nível Superior (CAPES); This paper reports the impact of process and dimensions on the sensitivity of the double gate Bio-TFET...
New approach for removing the self-heating from MOSFET current using only DC ch...
Mori, C. A. B.; Agopian, P. G. D. [UNESP]; Martino, J. A.; IEEEMade available in DSpace on 2019-10-04T19:12:11Z (GMT). No. of bitstreams: 0 Previous issue date: 2018-01-01; Conselho Nacional de Desenvolvimento Científico e Tecnológico (CNPq); Fundação de Amparo à Pesquisa do Estado de São Paulo (FAPESP); In this paper we report a new technique for removing the self-heating from the DC output characteristics of a MOSFET. In this method, the self-heating is eliminated from t...
Experimental Analysis of Differential Pairs Designed with Line Tunnel FET Devices
Martino, M. D. V.; Martino, J. A.; Agopian, P. G. D. [UNESP]; Rooyackers, R.; Simoen, E.; Collaert, N.; Claeys, C.; IEEEMade available in DSpace on 2019-10-04T19:12:24Z (GMT). No. of bitstreams: 0 Previous issue date: 2017-01-01; Conselho Nacional de Desenvolvimento Científico e Tecnológico (CNPq); Fundação de Amparo à Pesquisa do Estado de São Paulo (FAPESP); imec's Logic Device Program; The aim of this work is to study, for the first time, the behavior of differential pair circuits designed with Line TFETs and compare the suit...
Low Temperature Influence on Long Channel STI Last Process Relaxed and Strained...
Oliveira, A. V.; Agopian, P. G. D. [UNESP]; Martino, J. A.; Simoen, E.; Mitard, J.; Witters, L.; Collaert, N.; Claeys, C.; IEEEMade available in DSpace on 2019-10-04T19:12:30Z (GMT). No. of bitstreams: 0 Previous issue date: 2017-01-01; Coordenação de Aperfeiçoamento de Pessoal de Nível Superior (CAPES); Conselho Nacional de Desenvolvimento Científico e Tecnológico (CNPq); Fundação de Amparo à Pesquisa do Estado de São Paulo (FAPESP); FWO; Logic IIAP program; The operation of germanium p-type channel FinFETs with two types of different...