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Surface states influence in Al Schottky barrier of Ge nanowires
Kamimura, Hanay; Simon, Ricardo A.; Berengue, Olivia M. [UNESP]; Amorim, Cleber A.; Chiquito, Adenilson J.; Leite, Edson R.Made available in DSpace on 2022-04-28T18:59:51Z (GMT). No. of bitstreams: 0 Previous issue date: 2013-01-01; Aiming the understanding of how the application to devices is affected by the presence of oxygen in semiconductor nanostructures, Al/Ge-nanowires Schottky devices were fabricated without any previous treatment to remove the native oxide from nanowires' surface, originated during the growth process. Elec...
Date: 2022
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Origin: Oasisbr