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Complex centers of hydrogen in tin dioxide

Borges, P. D.; Scolfaro, L.; Assali, L. V. C.

Tin dioxide is a wide band-gap semiconductor and is part of a class of promising transparent conducting oxides. It shows n-type conductivity, even when not intentionally doped, and is usually attributed to intrinsic defects. Theoretically, the unintentional doping with hydrogen, either at interstitials or at O sites, has been proposed to provide the shallow donors for the n-type conductivity of SnO2. Since H is...

Date: 2018   |   Origin: Oasisbr






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