12 documents found, page 1 of 2

Bandlike transport in fapbbr3 quantum dot phototransistor with high hole mobili...

Halide perovskites have been widely explored for numerous optoelectronic applications among which phototransistors have appeared as one of the most promising light signal detectors. However, it is still a great challenge to endow halide perovskites with both mobility and high photosensitivity because of their high sensitivity to moisture in ambient atmosphere. Here, we explore an FAPbBr3 perovskite quantum dot ...

Improving positive and negative bias illumination stress stability in parylene ...

The impact of a parylene top-coating layer on the illumination and bias stress instabilities of indium-gallium-zinc oxide thin-film transistors (TFTs) is presented and discussed. The parylene coating substantially reduces the threshold voltage shift caused by continuous application of a gate bias and light exposure. The operational stability improves by 75%, and the light induced instability is reduced by 35%. ...

A multi-integrated approach on toxicity effects of engineered TiO2 nanoparticles

The new properties of engineered nanoparticles drive the need for new knowledge on the safety, fate, behavior and biologic effects of these particles on organisms and ecosystems. Titanium dioxide nanoparticles have been used extensively for a wide range of applications, e.g, self-cleaning surface coatings, solar cells, water treatment agents, topical sunscreens. Within this scenario increased environmental expo...

A multi-integrated approach on toxicity effects of engineered TiO2 nanoparticles

The new properties of engineered nanoparticles drive the need for new knowledge on the safety, fate, behavior and biologic effects of these particles on organisms and ecosystems. Titanium dioxide nanoparticles have been used extensively for a wide range of applications, e.g, self-cleaning surface coatings, solar cells, water treatment agents, topical sunscreens. Within this scenario increased environmental expo...

Operational stability of solution based zinc tin oxide/SiO2 thin film transisto...

In this study, we report solution-processed amorphous zinc tin oxide transistors exhibiting high operational stability under positive gate bias stress, translated by a recoverable threshold voltage shift of about 20% of total applied stress voltage. Under vacuum condition, the threshold voltage shift saturates showing that the gate-bias stress is limited by trap exhaustion or balance between trap filling and em...

Comparação dos efeitos de exposição a nanopartículas de TiO2 em duas espécies d...

Bioacumulação e efeitos da exposição a nanopartículas de TiO2 em Corbicula flum...

Avaliação de efeitos de nanopartículas de TI02 e nanoDiamante em organismos aqu...

Transparent oxide thin-film transistors: production, characterization and integ...

In partial fulfillment of the requirements for the degree of Doctor of Philosophy in Nanotechnologies and Nanosciences by Universidade Nova de Lisboa Faculdade de Ciências e Tecnologia

High-performance flexible hybrid field-effect transistors based on cellulose fi...

IEEE Electron Device Letters, VOL. 29, NO. 9,; Abstract—In this letter, we report for the first time the use of a sheet of cellulose-fiber-based paper as the dielectric layer used in oxide-based semiconductor thin-film field-effect transistors(FETs). In this new approach, we are using the cellulose–fiber-based paper in an “interstrate” structure since the device is built on both sides of the cellulose sheet. Su...