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Combining x-ray real and reciprocal space mapping techniques to explore the epi...

Magalhaes, S.; Cabaco, J. S.; Concepcion, O.; Buca, D.; Stachowicz, M.; Oliveira, F.; Cerqueira, M. F.; Lorenz, K.; Alves, E.

In the present work, the importance of determining the strain states of semiconductor compounds with high accuracy is demonstrated. For the matter in question, new software titled LAPAs, the acronym for LAttice PArameters is presented. The lattice parameters as well as the chemical composition of Al1-xInxN and Ge1-xSnx compounds grown on top of GaN- and Ge-buffered c-Al2O3 and (001) oriented Si substrates, resp...


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