4 documents found, page 1 of 1
Dielectric characterization of the BiFe0.5Cr0.5O3 ceramics
Palaimiene, E.; Gribauskaite, V.; Banys, J.; Pushkarev, A.V.; Radyush, Yu.V.; Olekhnovich, N.M.; Cardoso, J.P.V.; Salak, A.N.Dielectric properties of the BiFe0.5Cr0.5O3 ceramics synthesized under high pressure were investigated in a broad frequency range (20 Hz – 1 GHz) between 200 and 500 K. It was revealed that the ceramics exhibit electrical conductivity above 300 K. Below 300 K, a dielectric dispersion caused by ferroelectric domains was observed. It was found that the conductivity follows the Almond–West law, which allowed us to...
The phenomenon of conversion polymorphism in Bi-containing metastable perovskites
Khalyavin, D.D.; Salak, A.N.; Fertman, E.L.; Kotlyar, O.V..; Eardley, E.; Olekhnovich, N.M.; Pushkarev, A.V.; Radyush, Yu.V.; Fedorchenko, A.V.A post-synthesis thermal treatment of metastable phases in the high-pressure stabilised perovskite BiFe1-yScyO3 system results in the irreversible formation of polymorphs which represent novel polar and antipolar structures with interesting magnetic properties. Such annealing-stimulated polymorphism is believed to be a general phenomenon which can be found in other systems.
Unusual magnetic properties of the polar orthorhombic BiFe0.5Sc0.5O3 perovskite
Fedorchenko, A.V.; Fertman, E.L.; Salak, A.N.; Desnenko, V.A.; Čižmár, E.; Feher, A.; Vaisburd, A.I.; Olekhnovich, N.M.; Pushkarev, A.V.; Radyush, Yu.V.
Magnetic properties of the Bi0.65La0.35Fe0.5Sc0.5O3 perovskite
Fedorchenko, A.V.; Fertman, E.L.; Desnenko, V.A.; Kotlyar, O.V.; Čižmár, E.; Shvartsman, V.V.; Lupascu, D.C.; Salamon, S.; Wende, H.; Salak, A.N.Magnetic properties of polycrystalline multiferroic Bi0.65La0.35Fe0.5Sc0.5O3 synthesized under high-pressure (6 GPa) and high-temperature (1500 K) conditions were studied using a SQUID magnetometer technique. The temperature dependent static magnetic moment M was measured in both zero-field-cooled and field-cooled modes over the temperature range of 5-300 K in low magnetic field H = 0.02 kOe. The field dependen...