2 documents found, page 1 of 1
Low temperature photoluminescence in ultra-thin germanium quantum wells
Rodrigues,P. A. M.; Araújo-Silva,M. A.; Narvaez,G. A.; Cerdeira,F.; Bean,J. C.We measured the photoluminescence (PL) spectra of a series of Ge n quantum wells as a function of temperature, from 2K to 50K. The PL spectra at 2.1K are dominated by broad emission lines, which can be interpreted as recombination across the indirect gap of the Si/Ge microstructure and are strongly influenced by the interface morphology of each sample. Beyond T <img src="http:/img/fbpe/bjp/v29n3/547i1.gif" alt=...
Interface Morphology of Gen / Si Quantum Wells Studied with Raman Spectroscopy ...
Narvaez,Gustavo A.; Torriani,I. C. L.; Cerdeira,F.; Bean,J.C.We report Raman scattering and high-resolution X-ray diffraction measurements performed on a series of MBE-grown Si / Gen / Si quantum wells with n varying from 3 to 6. Our results are consistent with a gradual evolution of the Si / Ge interface which starts with Ge segregation and formation of terraces for low Ge coverage, to smooth 2D Ge layers, bounded by interfacial alloy layers, for coverages superior to 4...