4 documents found, page 1 of 1
Cu(In,Ga)Se2 based ultrathin solar cells the pathway from lab rigid to large sc...
Lopes, T. S.; Teixeira, J. P.; Curado, M. A.; Ferreira, B. R.; Oliveira, A. J. N.; Cunha, J. M. V.; Monteiro, M.; Violas, A.; Barbosa, J. R. S.The incorporation of interface passivation structures in ultrathin Cu(In,Ga)Se2 based solar cells is shown. The fabrication used an industry scalable lithography technique—nanoimprint lithography (NIL)—for a 15 × 15 cm2 dielectric layer patterning. Devices with a NIL nanopatterned dielectric layer are benchmarked against electron-beam lithography (EBL) patterning, using rigid substrates. The NIL patterned devic...
Cu(In,Ga)Se2 based ultrathin solar cells the pathway from lab rigid to large sc...
Lopes, T. S.; Teixeira, J. P.; Curado, M. A.; Ferreira, B. R.; Oliveira, A. J. N.; Cunha, J. M. V.; Monteiro, M.; Violas, A.; Barbosa, J. R. S.The incorporation of interface passivation structures in ultrathin Cu(In,Ga)Se2 based solar cells is shown. The fabrication used an industry scalable lithography technique—nanoimprint lithography (NIL)—for a 15 × 15 cm2 dielectric layer patterning. Devices with a NIL nanopatterned dielectric layer are benchmarked against electron-beam lithography (EBL) patterning, using rigid substrates. The NIL patterned devic...
Cu(In,Ga)Se2 based ultrathin solar cells the pathway from lab rigid to large sc...
Lopes, T.S.; Teixeira, J. P.; Curado, M. A.; Ferreira, B. R.; Oliveira, A. J. N.; Cunha, J. M. V.; Monteiro, M.; Violas, A.; Barbosa, J. R. S.The incorporation of interface passivation structures in ultrathin Cu(In,Ga)Se2 based solar cells is shown. The fabrication used an industry scalable lithography technique—nanoimprint lithography (NIL)—for a 15 × 15 cm2 dielectric layer patterning. Devices with a NIL nanopatterned dielectric layer are benchmarked against electron-beam lithography (EBL) patterning, using rigid substrates. The NIL patterned devic...
A morphological and electronic study of ultrathin rear passivated Cu(In,Ga)Se2 ...
Bose, S.; Cunha, J. M. V.; Borme, J.; Chen, W. C.; Nilsson, N. S.; Teixeira, J. P.; Gaspar, J.; Leitão, J. P.; Edoff, M.; Fernandes, P. A.The effects of introducing a passivation layer at the rear of ultrathin Copper Indium Gallium di-Selenide Cu(In,Ga)Se2 (CIGS) solar cells is studied. Point contact structures have been created on 25 nm Al2O3 layer using e-beam lithography. Reference solar cells with ultrathin CIGS layers provide devices with average values of light to power conversion efficiency of 8.1 % while for passivated cells values reache...