38 documents found, page 1 of 4
Low frequency noise performance of horizontal, stacked and vertical silicon nan...
Simoen, Eddy; de Oliveira, Alberto Vinicius; Agopian, Paula Ghedini Der [UNESP]; Ritzenthaler, Romain; Mertens, Hans; Horiguchi, NaotoMade available in DSpace on 2022-04-28T19:40:54Z (GMT). No. of bitstreams: 0 Previous issue date: 2021-10-01; The low frequency noise performance of Gate-All-Around Nanowire (NW) or Nanosheet (NS) Metal-Oxide-Semiconductor Field-Effect Transistors (MOSFETs) is investigated, taking account of the impact of the device architecture, i.e., junctionless (JL) versus inversion-mode (IM) and process variations for the ...
Impact of gate current on the operational transconductance amplifier designed w...
de M. Nogueira, Alexandro; G.D. Agopian, Paula [UNESP]; Simoen, Eddy; Rooyackers, Rita; Claeys, Cor; Collaert, Nadine; Martino, Joao A.Made available in DSpace on 2022-04-28T19:41:36Z (GMT). No. of bitstreams: 0 Previous issue date: 2021-12-01; An Operational Transconductance Amplifier (OTA) designed with SiGe-source nanowire Tunnel-FETs is presented and compared with OTAs designed with Si nanowire (NW) TFETs and Si NW MOSFETs with and without the effect of gate current (IG). The devices were modeled using Verilog-A language through lookup tab...
OTA Performance Comparison Designed with Experimental NW-MOSFET and NW-TFET Dev...
Nogueira, Alexandro De M.; Agopian, Paula G. D. [UNESP]; Rangel, Roberto; Martino, Joao A.; Simoen, Eddy; Rooyackers, Rita; Claeys, CorMade available in DSpace on 2021-06-25T10:11:08Z (GMT). No. of bitstreams: 0 Previous issue date: 2019-10-14; This paper presents, for the first time, the performance of an Operational Transconductance Amplifier (OTA) designed with the experimental data of Nanowire (NW) Si-Tunnel-FET compared to NW MOSFET devices. The experimental data of each device was used to feed the lookup table used in a Verilog-A model t...
Two-stage amplifier design based on experimental Line-Tunnel FET data
Filho, Walter Gonçalez; Martino, Joao A.; Rangel, Roberto; Agopian, Paula G. D. [UNESP]; Simoen, Eddy; Rooyackers, Rita; Claeys, Cor; Collaert, NadineMade available in DSpace on 2021-06-25T10:22:49Z (GMT). No. of bitstreams: 0 Previous issue date: 2019-10-14; This work presents for the first time a two-stage operational transconductance amplifier (OTA) design based on experimental Line-TFET devices. To account for different parasitic effects, make the project more feasible and avoid complicated and inaccurate analytical modelling, experimental devices are me...
Operational Transconductance Amplifier Designed with SiGe-source Nanowire Tunne...
Nogueira, Alexandro De M.; Agopian, Paula G. D. [UNESP]; Simoen, Eddy; Rooyackers, Rita; Claeys, Cor; Collaert, Nadine; Martino, Joao A.Made available in DSpace on 2021-06-25T10:26:25Z (GMT). No. of bitstreams: 0 Previous issue date: 2020-09-01; An Operational Transconductance Amplifier (OTA) circuit designed with SiGe-source nanowire Tunnel-FETs is presented for the first time. The results are compared with Si nanowire TFET and with Si nanowire MOSFET designs. The transistors were modeled using experimental data in order to obtain a lookup tab...
Device-Based Threading Dislocation Assessment in Germanium Hetero-Epitaxy
Simoen, Eddy; Hsu, Brent; Eneman, Geert; Rosseel, Eric; Loo, Roger; Arimura, Hiroaki; Horiguchi, Naoto; Wen, Wei-Chen; Nakashima, Hiroshi; Claeys, CorMade available in DSpace on 2020-12-10T17:33:08Z (GMT). No. of bitstreams: 0 Previous issue date: 2019-01-01; European Commission; A review on the electrical activity of extended defects and, more specifically, threading dislocations in germanium hetero-epitaxial layers is reported here. Focus is on the impact of some basic types of devices, like a p-n junction diode, a Metal-Oxide-Semiconductor (MOS) capacitor...
Analog design with Line-TFET device experimental data: From device to circuit l...
Gon alez Filho, Walter; Simoen, Eddy; Rooyackers, Rita; Claeys, Cor; Collaert, Nadine; Martino, Joao A; Agopian, Paula G D [UNESP]Made available in DSpace on 2020-12-12T01:20:44Z (GMT). No. of bitstreams: 0 Previous issue date: 2020-05-01; This work studies the use of line-tunnel field effect transistor (Line TFET) devices in analog applications. It presents the DC and small signal characteristics of these devices and compares them with other TFET topologies and with conventional MOSFET technology. The Line-TFET's saturation characteristi...
Device-based threading dislocation assessment in germanium hetero-epitaxy
Simoen, Eddy; Claeys, Cor; Oliveira, Alberto; Agopian, Paula [UNESP]; Martino, Joao; Hsu, Brent; Eneman, Geert; Rosseel, Eric; Loo, RogerMade available in DSpace on 2020-12-12T01:10:00Z (GMT). No. of bitstreams: 0 Previous issue date: 2019-08-01; A review on the electrical activity of extended defects and, more specifically, threading dislocations in germanium hetero-epitaxial layers is reported here. Focus is on the impact of some basic types of devices, like a p-n junction diode, a Metal-Oxide-Semiconductor (MOS) capacitor and a Fin-Field-Effe...
Low-Frequency and Random Telegraph Noise Performance of Ge-Based and III-V Devi...
Claeys, Cor; Agopian, Paula [UNESP]; Alian, AliRezza; Arimura, Hiroaki; Fangs, Wen; Martino, Joao; Mitard, Jerome; Neves, Felipe; Oliviera, AlbertoMade available in DSpace on 2019-10-04T12:15:15Z (GMT). No. of bitstreams: 0 Previous issue date: 2016-01-01; This review demonstrates the potential of low frequency noise diagnostics for the characterization of Ge-based and III-V technologies processed on a Si platform. The analysis of traps in both gate dielectrics and semiconductor films is illustrated for state-of-the-art devices.; IMEC, Leuven, Belgium; Ka...
On the assessment of electrically active defects in high-mobility materials and...
Simoen, Eddy; Eneman, Geert; Oliveira, Alberto Vinicius de; Ni, Kai; Mitard, Jerome; Witters, Liesbeth; Der Agopian, Paula Ghedini [UNESP]Made available in DSpace on 2019-10-04T12:15:15Z (GMT). No. of bitstreams: 0 Previous issue date: 2016-01-01; A possible strategy for the characterization of grown-in and processing-induced electrically active point and extended defects in high-mobility substrates is presented and illustrated by examples obtained on Ge as a prototype system.; IMEC, Kapeldreef 75, B-300 Leuven, Belgium; Univ Ghent, Depart Solid ...