2 documents found, page 1 of 1
Influence of growth temperature and carrier flux on the structure and transport...
Sousa, Pedro M.; Dias, Sonia A.; Conde, Olinda; Silvestre, António Jorge; Branford, William R.; Morris, Benjamin; Yates, Karen; Cohen, Lesley F.In this work we report on the structure and magnetic and electrical transport properties of CrO2 films deposited onto (0001) sapphire by atmospheric pressure (AP)CVD from a CrO3 precursor. Films are grown within a broad range of deposition temperatures, from 320 to 410 degrees C, and oxygen carrier gas flow rates of 50-500 seem, showing that it is viable to grow highly oriented a-axis CrO2 films at temperatures...
CVD of CrO(2): Towards a lower temperature deposition process
Sousa, Pedro M.; Dias, Sonia A.; Silvestre, António Jorge; Conde, Olinda; Morris, Benjamin; Yates, Karen A.; Branford, William R.; Cohen, Lesley F.The deposition of highly oriented a-axis CrO(2) films onto Al(2)O(3)(0001) by atmospheric pressure (AP)CVD at temperatures as low as 330 C is reported. Deposition rates strongly depend on the substrate temperature, whereas for film surface microstructures the dependence is mainly on film thickness. For the experimental conditions used in this work, CrO(2) growth kinetics are dominated by a surface reaction mech...