4 documents found, page 1 of 1
Cu(In,Ga)Se2 based ultrathin solar cells the pathway from lab rigid to large sc...
Lopes, T. S.; Teixeira, J. P.; Curado, M. A.; Ferreira, B. R.; Oliveira, A. J. N.; Cunha, J. M. V.; Monteiro, M.; Violas, A.; Barbosa, J. R. S.The incorporation of interface passivation structures in ultrathin Cu(In,Ga)Se2 based solar cells is shown. The fabrication used an industry scalable lithography technique—nanoimprint lithography (NIL)—for a 15 × 15 cm2 dielectric layer patterning. Devices with a NIL nanopatterned dielectric layer are benchmarked against electron-beam lithography (EBL) patterning, using rigid substrates. The NIL patterned devic...
Cu(In,Ga)Se2 based ultrathin solar cells the pathway from lab rigid to large sc...
Lopes, T. S.; Teixeira, J. P.; Curado, M. A.; Ferreira, B. R.; Oliveira, A. J. N.; Cunha, J. M. V.; Monteiro, M.; Violas, A.; Barbosa, J. R. S.The incorporation of interface passivation structures in ultrathin Cu(In,Ga)Se2 based solar cells is shown. The fabrication used an industry scalable lithography technique—nanoimprint lithography (NIL)—for a 15 × 15 cm2 dielectric layer patterning. Devices with a NIL nanopatterned dielectric layer are benchmarked against electron-beam lithography (EBL) patterning, using rigid substrates. The NIL patterned devic...
Cu(In,Ga)Se2 based ultrathin solar cells the pathway from lab rigid to large sc...
Lopes, T.S.; Teixeira, J. P.; Curado, M. A.; Ferreira, B. R.; Oliveira, A. J. N.; Cunha, J. M. V.; Monteiro, M.; Violas, A.; Barbosa, J. R. S.The incorporation of interface passivation structures in ultrathin Cu(In,Ga)Se2 based solar cells is shown. The fabrication used an industry scalable lithography technique—nanoimprint lithography (NIL)—for a 15 × 15 cm2 dielectric layer patterning. Devices with a NIL nanopatterned dielectric layer are benchmarked against electron-beam lithography (EBL) patterning, using rigid substrates. The NIL patterned devic...
Synthesis, structural and dielectric properties of Ca3Mn2O7 thin films prepared...
Silva, Bruna Machado; Oliveira, J.; Rebelo, Tiago Miguel Pereira; Bayzi Isfahani, Vahideh; Rocha-Rodrigues, P.; Lekshmi, N.; Belo, J. H.; Deepak, F. L.Multiferroic Ruddlesden-Popper Ca3Mn2O7 thin films were prepared by laser ablation on SrTiO3 substrates. For low laser fluences and high oxygen pressures, the films assumed the CaMnO3 Pnma orthorhombic structure. However, by increasing fluence and decreasing the oxygen pressure, the Ca3Mn2O7 phase is achieved through a post-deposition annealing treatment. Furthermore, the ferroelectric phase A21am was observed ...