11 documents found, page 1 of 2
Low energy muon study of the p-n interface in chalcopyrite solar cells
Alberto, H. V.; Vilão, R. C.; Ribeiro, E. F. M.; Gil, J. M.; Curado, M. A.; Teixeira, J. P.; Fernandes, P. A.; Cunha, J. M. V.; Salomé, P. M. P.The slow muon technique was used to study the p-n junction of chalcopyrite solar cells. A defect layer near the interface was identi ed and the passivation of the defects by bu er layers was studied. Several cover layers on top of the chalcopyrite Cu(In,Ga)Se2 (CIGS) semiconductor absorber were investigated in this work, namely CdS, ZnSnO, Al2O3 and SiO2. Quantitative results were obtained: The defect layer ext...
Cu(In,Ga)Se2 based ultrathin solar cells the pathway from lab rigid to large sc...
Lopes, T. S.; Teixeira, J. P.; Curado, M. A.; Ferreira, B. R.; Oliveira, A. J. N.; Cunha, J. M. V.; Monteiro, M.; Violas, A.; Barbosa, J. R. S.The incorporation of interface passivation structures in ultrathin Cu(In,Ga)Se2 based solar cells is shown. The fabrication used an industry scalable lithography technique—nanoimprint lithography (NIL)—for a 15 × 15 cm2 dielectric layer patterning. Devices with a NIL nanopatterned dielectric layer are benchmarked against electron-beam lithography (EBL) patterning, using rigid substrates. The NIL patterned devic...
Cu(In,Ga)Se2 based ultrathin solar cells the pathway from lab rigid to large sc...
Lopes, T. S.; Teixeira, J. P.; Curado, M. A.; Ferreira, B. R.; Oliveira, A. J. N.; Cunha, J. M. V.; Monteiro, M.; Violas, A.; Barbosa, J. R. S.The incorporation of interface passivation structures in ultrathin Cu(In,Ga)Se2 based solar cells is shown. The fabrication used an industry scalable lithography technique—nanoimprint lithography (NIL)—for a 15 × 15 cm2 dielectric layer patterning. Devices with a NIL nanopatterned dielectric layer are benchmarked against electron-beam lithography (EBL) patterning, using rigid substrates. The NIL patterned devic...
Cu(In,Ga)Se2 based ultrathin solar cells the pathway from lab rigid to large sc...
Lopes, T.S.; Teixeira, J. P.; Curado, M. A.; Ferreira, B. R.; Oliveira, A. J. N.; Cunha, J. M. V.; Monteiro, M.; Violas, A.; Barbosa, J. R. S.The incorporation of interface passivation structures in ultrathin Cu(In,Ga)Se2 based solar cells is shown. The fabrication used an industry scalable lithography technique—nanoimprint lithography (NIL)—for a 15 × 15 cm2 dielectric layer patterning. Devices with a NIL nanopatterned dielectric layer are benchmarked against electron-beam lithography (EBL) patterning, using rigid substrates. The NIL patterned devic...
Recombination channels in Cu(In,Ga)Se2 thin films: impact of the Ga-profile
Teixeira, J. P.; Vieira, R. B. L.; Falcão, B. P.; Edoff, M.; Salomé, P. M. P.; Leitão, J. P.Depth bandgap profiles via a [Ga]/([Ga]+[In]) variation in the Cu(In,Ga)Se2 (CIGS) absorber layer have been implemented as a strategy to enhance the performance of CIGS solar cells. Since the [Ga]/([Ga]+[In]) determines to a large extent the position of the conduction band minimum, different Ga-profiles lead to different electronic energy levels structures throughout the CIGS layer. In this paper, from the inve...
A morphological and electronic study of ultrathin rear passivated Cu(In,Ga)Se2 ...
Bose, S.; Cunha, J.M.V.; Borme, J.; Chen, W.C.; Nilsson, N.S.; Teixeira, J.P.; Gaspar, J.; Leitão, J.P.; Edoff, M.; Fernandes, P. A.; Salomé, P.M.P.The effects of introducing a passivation layer at the rear of ultrathin Copper Indium Gallium di-Selenide Cu(In,Ga)Se2 (CIGS) solar cells is studied. Point contact structures have been created on 25 nm Al2O3 layer using e-beam lithography. Reference solar cells with ultrathin CIGS layers provide devices with average values of light to power conversion efficiency of 8.1% while for passivated cells values reached...
Decoupling of optical and electrical properties of rear contact CIGS solar cells
Cunha, J. M. V.; Lopes, T. S.; Bose, S.; Hultqvist, A.; Chen, W.-C.; Donzel-Gargand, O.; Ribeiro, R. M.; Oliveira, A. J. N.; Edoff, M.; Fernandes, P. A.A novel architecture that comprises rear interface passivation and increased rear optical reflection is presented with the following advantages: i) an enhanced optical reflection is achieved by depositing a metallic layer over the Mo rear contact; ii) the addition of a sputtered Al2O3 layer improves the interface quality with CIGS; and, iii) the rear-openings are refilled with Mo to maintain the optimal ohmic e...
Rear optical reflection and passivation using a nanopatterned metal/dielectric ...
Lopes, T. S.; Cunha, J. M. V.; Bose, S.; Barbosa, J. R. S.; Borme, J.; Donzel-Gargand, O.; Rocha, C.; Silva, R.; Hultqvist, A.; Chen, W.-C.Currently, one of the main limitations in ultrathin Cu(In,Ga)Se2 (CIGS) solar cells are the optical losses, since the absorber layer is thinner than the light optical path. Hence, light management, including rear optical reflection and light trapping is needed. In this work we focus on increasing the rear optical reflection. For this, a novel structure based on having a metal interlayer in between the Mo rear c...
A morphological and electronic study of ultrathin rear passivated Cu(In,Ga)Se2 ...
Bose, S.; Cunha, J. M. V.; Borme, J.; Chen, W. C.; Nilsson, N. S.; Teixeira, J. P.; Gaspar, J.; Leitão, J. P.; Edoff, M.; Fernandes, P. A.The effects of introducing a passivation layer at the rear of ultrathin Copper Indium Gallium di-Selenide Cu(In,Ga)Se2 (CIGS) solar cells is studied. Point contact structures have been created on 25 nm Al2O3 layer using e-beam lithography. Reference solar cells with ultrathin CIGS layers provide devices with average values of light to power conversion efficiency of 8.1 % while for passivated cells values reache...
Insulator materials for interface passivation of Cu(In,Ga)Se2 thin films
Cunha, J. M. V.; Fernandes, P. A.; Hultqvist, A.; Teixeira, J. P.; Bose, S.; Vermang, B.; Garud, S.; Buldu, D.; Gaspar, J.; Edoff, M.; Leitão, J. P.In this work, Metal-Insulator-Semiconductor (MIS) structures were fabricated in order to study different types of insulators, namely, aluminum oxide (Al2O3), silicon nitride (Si3Nx) and silicon oxide (SiOx) to be used as passivation layers in Cu(In,Ga)Se2 (CIGS) thin film solar cells. The investigated stacks consisted of SLG/Mo/CIGS/insulator/Al. Raman scattering and Photoluminescence measurements were done to ...