8 documents found, page 1 of 1
SiOx Patterned Based Substrates Implemented in Cu(In,Ga)Se2 Ultrathin Solar Cel...
Oliveira, Kevin; Teixeira, Jennifer P.; Chen, Wei-Chao; Lontchi Jioleo, Jackson; Oliveira, Antonio J. N.; Caha, Ihsan; Francis, Leonard DeepakInterface recombination in sub-µm optoelectronics has a major detrimental impact on devices’ performance, showing the need for tailored passivation strategies to reach a technological boost. In this work, SiOx passivation based substrates were developed and integrated into ultrathin Cu(In,Ga)Se2 (CIGS) solar cells. This study aims to understand the impact of a passivation strategy, which uses several SiOx layer...
Perovskite Metal-Oxide-Semiconductor Structures for Interface Characterization
Cunha, J.M.V.; Barreiros, M. Alexandra; Curado, M.A.; Lopes, T.S.; Oliveira, K.; Oliveira, A.J.N.; Barbosa, J.R.S.; Vilanova, AntónioABSTRACT: Perovskite solar cells (PSCs) are one of the most promising photovoltaic technologies. Amongst several challenges, developing and optimizing efficient electron transport layers that can be up-scaled still remains a massive task. Admittance measurements on metal-oxide-semiconductor (MOS) devices allow to better understand the optoelectronic properties of the interface between perovskite and the charge ...
Perovskite Metal-Oxide-Semiconductor Structures for Interface Characterization
Cunha, J.M.V.; Barreiros, M. Alexandra; Curado, M.A.; Lopes, T.S.; Oliveira, K.; Oliveira, A.J.N.; Barbosa, J.R.S.; Vilanova, AntónioABSTRACT: Perovskite solar cells (PSCs) are one of the most promising photovoltaic technologies. Amongst several challenges, developing and optimizing efficient electron transport layers that can be up-scaled still remains a massive task. Admittance measurements on metal-oxide-semiconductor (MOS) devices allow to better understand the optoelectronic properties of the interface between perovskite and the charge ...
Metal-Oxide-Semiconductor devices for interface studies for perovskite technolo...
Cunha, J.M.V.; Barreiros, M. Alexandra; Teixeira, J.P.; Curado, M.A.; Lopes, T.S.; Oliveira, K.; Oliveira, A.J.N.; Barbosa, J.R.S.; Vilanova, António
Optoelectronic Study of Perovskites/SnO2 based Metal-Insulator-Semiconductor St...
Cunha, J.M.V.; Barreiros, M. Alexandra; Curado, M.A.; Lopes, T.S.; Oliveira, K.; Oliveira, A.J.N.; Vinhais, C.; Flandre, Denis; Teixeira, J.P.
High‐performance and industrially viable nanostructured siOx layers for interfa...
Cunha, José M. V.; Oliveira, Kevin; Lontchi, Jackson; Lopes, Tomás S.; Curado, Marco A.; Barbosa, João R. S.; Vinhais, Carlos; Chen, Wei-ChaoHerein, it is demonstrated, by using industrial techniques, that a passivation layer with nanocontacts based on silicon oxide (SiOx) leads to significant improvements in the optoelectronical performance of ultrathin Cu(In,Ga)Se2 (CIGS) solar cells. Two approaches are applied for contact patterning of the passivation layer: point contacts and line contacts. For two CIGS growth conditions, 550 and 500 °C, the SiO...
Perovskite metal–oxide–semiconductor structures for interface characterization
Cunha, José M. V.; Barreiros, M. Alexandra; Curado, Marco A.; Lopes, Tomás S.; Oliveira, Kevin; Oliveira, António J. N.; Barbosa, João R. S.Perovskite solar cells (PSCs) are one of the most promising photovoltaic technologies. Amongst several challenges, developing and optimizing efficient electron transport layers (ETLs) that can be up-scaled still remains a massive task. Admittance measurements on Metal-Oxide-Semiconductor (MOS) devices allow to better understand the optoelectronic properties of the interface between perovskite and the charge car...
Improved operation of graded-channel SOI nMOSFETs down to liquid helium tempera...
Flandre, Denis