3 documents found, page 1 of 1
Surface states influence in Al Schottky barrier of Ge nanowires
Kamimura, Hanay; Simon, Ricardo A.; Berengue, Olivia M. [UNESP]; Amorim, Cleber A.; Chiquito, Adenilson J.; Leite, Edson R.Made available in DSpace on 2022-04-28T18:59:51Z (GMT). No. of bitstreams: 0 Previous issue date: 2013-01-01; Aiming the understanding of how the application to devices is affected by the presence of oxygen in semiconductor nanostructures, Al/Ge-nanowires Schottky devices were fabricated without any previous treatment to remove the native oxide from nanowires' surface, originated during the growth process. Elec...
Um estudo sobre crescimento de nanofios de fosfeto de índio e algumas de suas p...
Kamimura, HanayFundação de Amparo à Pesquisa do Estado de São Paulo (FAPESP); This work presents the development of an experimental apparatus and a route for the growth of InP nanowires whose general characteristics and properties made them suitable for the construction of electronic devices. Among theses characteristics, one may cite: desired dimensions, uniformity, quantity and composition. The synthesis system allowed the ...
Nanofios de Ge : síntese e dispositivos
Kamimura, HanayUniversidade Federal de Sao Carlos; Abstract In this work, germanium nanowires' based devices were studied and developed and the influence of natural disorder on the electronic properties of these structures was also investigated. Parameters related to the current transport mechanisms, such as electron mobility, localization length and Schottky barrier height were determined. Such investigations were carried ou...