4 documents found, page 1 of 1
Low energy muon study of the p-n interface in chalcopyrite solar cells
Alberto, H. V.; Vilão, R. C.; Ribeiro, E. F. M.; Gil, J. M.; Curado, M. A.; Teixeira, J. P.; Fernandes, P. A.; Cunha, J. M. V.; Salomé, P. M. P.The slow muon technique was used to study the p-n junction of chalcopyrite solar cells. A defect layer near the interface was identi ed and the passivation of the defects by bu er layers was studied. Several cover layers on top of the chalcopyrite Cu(In,Ga)Se2 (CIGS) semiconductor absorber were investigated in this work, namely CdS, ZnSnO, Al2O3 and SiO2. Quantitative results were obtained: The defect layer ext...
Muon implantation experiments in films: obtaining depth-resolved information
Simões, A. F. A.; Alberto, H. V.; Vilão, R. C.; Gil, J. M.; Cunha, J. M. V.; Curado, M. A.; Salomé, P. M. P.; Prokscha, T.; Suter, A.; Salman, Z.Implanted positive muons with low energies (in the range 1-30 keV) are extremely useful local probes in the study of thin films and multi-layer structures. The average muon stopping depth, typically in the order of tens of nanometers, is a function of the muon implantation energy and of the density of the material, but the stopping range extends over a broad region, which is also in the order of tens of nanomet...
Slow-muon study of quaternary solar-cell materials: Single layers and p-n junct...
Alberto, H. V.; Vilão, R. C.; Vieira, R. B. L.; Gil, J. M.; Weidinger, A.; Sousa, M. G.; Teixeira, J. P.; Cunha, A. F.; Leitão, J. P.; Salomé, P. M. P.
Slow-muon study of quaternary solar-cell materials: single layers and p−n junct...
Alberto, H. V.; Vilão, R. C.; Vieira, R. B. L.; Gil, J. M.; Weidinger, A.; Sousa, M. G.; Teixeira, J. P.; Cunha, A. F. da; Leitão, J. P.Thin films and p-n junctions for solar cells based on the absorber materials Cu(In,Ga)Se2 and Cu2ZnSnS4 were investigated as a function of depth using implanted low energy muons. The most significant result is a clear decrease of the formation probability of the Mu+ state at the heterojunction interface as well as at the surface of the Cu(In,Ga)Se2 film. This reduction is attributed to a reduced bonding reactio...