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Cu(In,Ga)Se$$_2$$-based solar cells for space applications: Proton irradiation ...
Candeias, Maria B.; Fernandes, Tiago V.; Falcão, Bruno P.; Cunha, António F.; Cunha, José M. V.; Barbosa, João; Teixeira, Jennifer P.In this work, we present an experimental study of a Cu(In,Ga)Se2 (CIGS)-based solar cell (SC), irradiated with protons of energy 80 and 180 keV and with fuences of 1012 , 1013 , and 1014 cm−2 , as well as a strategy to recover the induced damage. The possible modifcations of the structural, electrical, and optical properties, induced by the proton irradiation, were investigated. Although the irradiation did not...
Molybdenum oxide thin films grown on flexible ITO-coated PET substrates
Marciel, Alice; Graça, Manuel; Bastos, Alexandre; Pereira, Luiz; Suresh Kumar, Jakka; Borges, Joel; Vaz, F.; Peres, Marco; Magalhães, SergioMolybdenum oxide thin films were deposited on stiff and flexible substrates by reactive DC magnetron sputtering. Two sets of samples were prepared. The first with different O<sub>2</sub>/Ar flow rate ratios and the second, fixing the oxygen content, with different time of deposition. As the O<sub>2</sub>/Ar flow rate ratio varies from 0 up to 0.56, a threshold was found, ranging from crystalline to amorphous na...
Characterisation of III-nitride materials by synchrotron X-ray microdiffraction...
Kachkanov, Vyacheslav; Dolbnya, Igor; O'Donnell, Kevin; Lorenz, Katharina; Pereira, Sergio; Watson, Ian; Sadler, Thomas; Li, HaoningX-ray Reciprocal Space Mapping (RSM) is a powerful tool to explore the structure of semiconductor materials. However, conventional lab-based RSMs are usually measured in two dimensions (2D) ignoring the third dimension of diffraction-space volume. We report the use of a combination of X-ray microfocusing and state-of-the-art 2D area detectors to study the full volume of diffraction-space while probing III-nitri...
Effect of Eu-implantation and annealing on the GaN quantum dots excitonic recom...
Peres, Marco; Magalhães, Sérgio; Fellmann, Vincent; Daudin, Bruno; Neves, Armando José; Alves, Eduardo; Lorenz, Katharina; Monteiro, TeresaUndoped self-assembled GaN quantum dots (QD) stacked in superlattices (SL) with AlN spacer layers were submitted to thermal annealing treatments. Changes in the balance between the quantum confinement, strain state of the stacked heterostructures and quantum confined Stark effect lead to the observation of GaN QD excitonic recombination above and below the bulk GaN bandgap. In Eu-implanted SL structures, the Ga...