Pulsed power technologies demand dielectric capacitors that possess a high energy storage density and efficiency at low applied electric fields/voltages. In this work, we engineered the morphology of lead-free \( 0.85[0.6\text{Ba}(\text{Zr}_{0.2}\text{Ti}_{0.8})\text{O}_3–0.4(\text{Ba}_{0.7}\text{Ca}_{0.3})\text{TiO}_3]–0.15\text{SrTiO}_3 \) (BZCT–STO) epitaxial thin films, fabricated using the pulsed laser dep...
Ferroelectric memory devices such as ferroelectric memristors, ferroelectric tunnel junctions, and field-effect transistors are considered among the most promising candidates for neuromorphic computing devices. The promise arises from their defect-independent switching mechanism, low energy consumption and high power efficiency, and important properties being aimed for are reliable switching at high speed, exce...