3 documents found, page 1 of 1
Robust multiferroicity and magnetic modulation of the ferroelectric imprint fie...
Zakusylo, Tetiana; Quintana, Alberto; Lenzi, Veniero; Silva, José Pedro Basto; Marques, L.; Yano, José Luís Ortolá; Lyu, Jike; Sort, JordiMagnetoelectric multiferroics, either single-phase or composites comprising ferroelectric/ferromagnetic coupled films, are promising candidates for energy efficient memory computing. However, most of the multiferroic magnetoelectric systems studied so far are based on materials that are not compatible with industrial processes. Doped hafnia is emerging as one of the few CMOS-compatible ferroelectric materials. ...
Roadmap on ferroelectric hafnia- and zirconia-based materials and devices
Silva, José Pedro Basto; Alcala, Ruben; Avci, Uygar E.; Barrett, Nick; Bégon-Lours, Laura; Borg, Mattias; Byun, Seungyong; Chang, Sou ChiFerroelectric hafnium and zirconium oxides have undergone rapid scientific development over the last decade, pushing them to the forefront of ultralow-power electronic systems. Maximizing the potential application in memory devices or supercapacitors of these materials requires a combined effort by the scientific community to address technical limitations, which still hinder their application. Besides their fav...
Disentangling stress and strain effects in ferroelectric HfO2
Song, Tingfeng; Lenzi, Veniero; Silva, José Pedro Basto; Marques, L.; Fina, Ignasi; Sánchez, FlorencioFerroelectric HfO2 films are usually polycrystalline and contain a mixture of polar and nonpolar phases. This challenges the understanding and control of polar phase stabilization and ferroelectric properties. Several factors, such as dopants, oxygen vacancies, or stress, among others, have been investigated and shown to have a crucial role on optimizing the ferroelectric response. Stress generated during depos...