Funding Information: This work was also financed by national funds from FCT/MCETS (Fundação para a Ciência e Tecnologia and Ministério da Ciência, Tecnologia e Ensino Superior) in the scope of the projects LA/P/0037/2020, Nanomodelling and Nanofabrication, i3N, LA/P/0006/2020, CICECO-Aveiro Institute of Materials. Publisher Copyright: © 2023 by the authors.; The present contribution aims to enhance solar cells’...
ECR/2017/000931 POCI-01-0145-FEDER-007688; This paper reports on-chip rail-to-rail timing signals generation thin-film circuits for the first time. These circuits, based on a-IGZO thin-film transistors (TFTs) with a simple staggered bottom gate structure, allow row and column selection of a sensor matrix embedded in a flexible radiation sensing system. They include on-chip clock generator (ring oscillator), col...
ECR/2017/000931 POCI-01-0145-FEDER-007688 PTDC/NAN-MAT/30812/2017; This paper presents a high-speed ring oscillator (RO) with amorphous Indium-Gallium-Zinc-Oxide Thin-film transistors (a-IGZO TFTs). The proposed RO reduces the delay of a single stage inverter using intermediate signals generated within the RO, hence, improving the speed. To validate the proposed idea, two conventional ROs (with diode-load load ...
Zinc-tin oxide (ZTO) is widely invoked as a promising indium and gallium-free alternative for amorphous oxide semiconductor based thin-film transistors (TFTs). The main bottleneck of this semiconductor material compared to mainstream indium-gallium-zinc oxide (IGZO) is centered in the larger processing temperatures required to achieve acceptable performance (>300 °C), not compatible with low-cost flexible subst...
ECR/2017/000931 POCI-01-0145-FEDER-007688 SFRH/BD/122286/2016 ORABAC/17852; This paper presents design and implementation of 8-bit shift register with low-voltage amorphous Indium Gallium Zinc Oxide (a-IGZO) thin-film transistors (TFTs) for row/column selection of pixel matrix in flexible displays. This circuit is capable of ensuring complete rail-to-rail operation by employing novel NAND gates that were develo...
ECR/2017/000931. POCI-01-0145-FEDER-007688. SFRH/BD/122286/2016.; This paper presents a high speed digitally programmable Ring Oscillator (RO) using Indium-gallium-zinc oxide thin-film transistors (IGZO TFTs). Proposed circuit ensures high speed compared to the conventional ROs using negative skewed scheme, in which each inverter delay is reduced by pre-maturely switching on/off the transistors. In addition, by...
This work was funded by the European Union (EU) seventh Framework Programme (FP7/2007-2013) under grant agreement no. 611070, "Integrated Flexible Photonic Sensors System (iFLEXIS)" and by the EU Horizon 2020 Programme (European Research Council) under grant agreement no. 716510, 'Transparent and flexible electronics with embedded energy harvesting based on oxide nanowire devices (TREND)" projects. Further fund...