Pulsed power technologies demand dielectric capacitors that possess a high energy storage density and efficiency at low applied electric fields/voltages. In this work, we engineered the morphology of lead-free \( 0.85[0.6\text{Ba}(\text{Zr}_{0.2}\text{Ti}_{0.8})\text{O}_3–0.4(\text{Ba}_{0.7}\text{Ca}_{0.3})\text{TiO}_3]–0.15\text{SrTiO}_3 \) (BZCT–STO) epitaxial thin films, fabricated using the pulsed laser dep...
Demand for energy storage is increasing day by day and developing a pollution free environment necessitates new battery technologies. However, the existing energy storage technologies like lithium (Li)-ion batteries cannot fulfil the future needs alone. In this regard, Li-free batteries such as sodium (Na), potassium (K), zinc (Zn) and magnesium (Mg) ion batteries have attracted significant attention due to the...
This work shows the fabrication of an efficient ternary heterostructure photocatalyst by integrating ferroelectric BaTiO3 (BTO) as the bottom layer, semiconductor MoO3 as the middle layer and plasmonic silver nanoparticles (Ag NPs) as the top layer, respectively. The BaTiO3/MoO3/Ag (BMA) heterostructure exhibits a higher photodegradation and photocatalytic efficiency of 100% for rhodamine B (RhB) dye under a UV...
[Excerpt] International crisis such as global warming, environmental pollution, and e-waste significantly increased the demand of electronic devices powered by renewable and sustainable energy sources [1, 2]. It is known that batteries are key renewable energy sources for powering electronic systems, which suffer from drawbacks like environmental issues, limited life-time, weight, and periodic maintenance or re...
Among currently available energy storage (ES) devices, dielectric capacitors are optimal systems owing to their having the highest power density, high operating voltages, and a long lifetime. Standard high performance ferroelectric-based ES devices are formed of complex composition perovskites and require precision, high-temperature thin film fabrication. The discovery of ferroelectricity in doped HfO2 in 2011 ...
Zirconia- and hafnia-based thin films have attracted tremendous attention in the past decade because of their unexpected ferroelectric behavior at the nanoscale, which enables the downscaling of ferroelectric devices. The present work reports an unprecedented ferroelectric rhombohedral phase of ZrO2 that can be achieved in thin films grown directly on (111)-Nb:SrTiO3 substrates by ion-beam sputtering. Structura...
In this work, the ferroelectric and fatigue characteristics of Au/0.5Ba(Zr0.2Ti0.8)O3-0.5(Ba0.7Ca0.3)TiO3(BCZT)/Si metal–ferroelectric–semiconductor (MFS) structures are investigated. Moreover, the effect of introducing a thin dielectric HfO2–Al2O3 (HAO) layer with different thicknesses between the BCZT layer and the Si substrate on the ferroelectric characteristics in the metal–ferroelectric–insulator–semicond...
In this study, the effect of Ba doping content on the photocatalytic activity of (Zn1‐xBaxO (ZBO); x=0 to 0.2) thin films is investigated. The efficiency of ZBO photocatalyst for the decolorization of Rhodamine B (RhB) is found to be optimum at x=0.1. The Zn0.9Ba0.1O film exhibits an efficiency of urn:x-wiley:23656549:media:slct201904943:slct201904943-math-0001 96% at an irradiation time of 60 min. The high pho...
Herein, the effect of the insertion of a thin dielectric HfO2:Al2O3 (HAO) layer at different positions in the Pt/0.5Ba(Zr0.2Ti0.8)O3–0.5(Ba0.7Ca0.3)TiO3 (BCZT)/Au structure on the energy storage performance of the capacitors is investigated. A high storage performance is achieved through the insertion of a HAO layer between BCZT and Au layers. The insertion of the dielectric layer causes a depolarization field ...
The effect of pulse amplitude on the ferroelectric and switching properties of pulsed laser deposited Ba0.8Sr0.2TiO3 thin films has been studied. The structural and morphological analysis revealed that the films had a well crystallized perovskite phase and grain size of about 30-40 nm. A well saturated P-E hysteresis loop was observed with a remnant polarization (Pr) approximate to 4.8 mu C/cm(2) and a coercive...