4 documents found, page 1 of 1

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Taking the pulse of Earth's tropical forests using networks of highly distribut...

Blundo, Cecilia; Carilla, Julieta; Grau, Ricardo; Malizia, Agustina; Malizia, Lucio; Osinaga-Acosta, Oriana; Bird, Michael; Bradford, Matt

Made available in DSpace on 2021-06-25T11:16:28Z (GMT). No. of bitstreams: 0 Previous issue date: 2021-01-01; Agence Nationale Des Parcs Nationaux; Centre for International Forestry Research; Departamento Administrativo de Ciencia, Tecnología e Innovación (COLCIENCIAS); David and Lucile Packard Foundation; European Space Agency; Leverhulme Trust; Gordon and Betty Moore Foundation; Fundação de Amparo à Pesquisa ...

Date: 2021   |   Origin: Oasisbr

Long-term thermal sensitivity of Earth’s tropical forests

Sullivan, Martin J. P.; Lewis, Simon L.; Affum-Baffoe, Kofi; Castilho, Carolina; Costa, Flávia; Sanchez, Aida Cuni; Ewango, Corneille E. N.

The sensitivity of tropical forest carbon to climate is a key uncertainty in predicting global climate change. Although short-term drying and warming are known to affect forests, it is unknown if such effects translate into long-term responses. Here, we analyze 590 permanent plots measured across the tropics to derive the equilibrium climate controls on forest carbon. Maximum temperature is the most important p...


Rapid thermal annealing: An efficient method to improve the electrical properti...

Aziz, Mohsin; Felix, Jorlandio F.; Jameel, Dler; Al Saqri, Noor; Al Mashary, Faisal S.; Alghamdi, Haifaa M.; Albalawi, Hind M.A.; Taylor, David

The effect of thermal annealing on Te compensated Interfacial Misfit GaSb/GaAs heterostructures is investigated by using two different thermal annealing procedures, namely rapid thermal annealing and furnace annealing. The electrical properties of the devices are studied by using Current–Voltage, Capacitance–Voltage and Deep Level Transient Spectroscopy techniques. It is observed that rapid thermal annealing tr...

Date: 2018   |   Origin: Oasisbr

Effect of gamma radiation on the electrical properties of polyaniline/silicon c...

Felix, Jorlandio F.; Cunha, Diego L. da; Aziz, Mohsin; Silva Jr., Eronides F. da; Taylor, David; Henini, Mohamed; Azevedo, Walter M. de

Polyaniline thin films have been deposited by a very simple technique on p-type Silicon Carbide (SiC) substrates to fabricate heterojunctions devices with good electrical properties. In this work two heterojunctions devices of Polyaniline (PANI) on p-type 4H–SiC and 6H–SiC substrates were electrically characterized using current- voltage (I-V) in the temperature range 20–430 K Capacitance–frequency (C-f) measur...

Date: 2018   |   Origin: Oasisbr

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