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Strain and crystal field splitting inversion in III-Nitrides
Sipahi, Guilherme Matos
Date: 2022
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Origin: Oasisbr
Study of semiconductor AlN with density functional theory
Sipahi, Guilherme Matos
Date: 2020
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Origin: Oasisbr
Propriedades eletrônicas de semicondutores a partir do estudo das simetrias dos...
Sipahi, Guilherme Matos
Date: 2020
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Origin: Oasisbr
Hamiltoniano por formalismo k·p para estruturas Zincblende
Sipahi, Guilherme Matos
Date: 2020
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Origin: Oasisbr
Implementação e manutenção de código computacional em framework de cálculo de e...
Sipahi, Guilherme Matos
Date: 2020
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Origin: Oasisbr
Theoretical prediction of the optical transitions in bulk wurtzite GaP
Sipahi, Guilherme Matos
Date: 2020
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Origin: Oasisbr
Edge transport in GaSb/InAs double quantum wells
Sipahi, Guilherme Matos
Date: 2020
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Origin: Oasisbr
Realistic g-factors, effective mass and k.p parameters for III-V semiconductors...
Sipahi, Guilherme Matos
Date: 2019
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Origin: Oasisbr
Electric tuning of topological properties in a symmetric broken gap quantum well
Sipahi, Guilherme Matos
Date: 2019
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Origin: Oasisbr