4 documents found, page 1 of 1
Muon implantation experiments in films: obtaining depth-resolved information
Simões, A. F. A.; Alberto, H. V.; Vilão, R. C.; Gil, J. M.; Cunha, J. M. V.; Curado, M. A.; Salomé, P. M. P.; Prokscha, T.; Suter, A.; Salman, Z.Implanted positive muons with low energies (in the range 1-30 keV) are extremely useful local probes in the study of thin films and multi-layer structures. The average muon stopping depth, typically in the order of tens of nanometers, is a function of the muon implantation energy and of the density of the material, but the stopping range extends over a broad region, which is also in the order of tens of nanomet...
Slow-muon study of quaternary solar-cell materials: Single layers and p-n junct...
Alberto, H. V.; Vilão, R. C.; Vieira, R. B. L.; Gil, J. M.; Weidinger, A.; Sousa, M. G.; Teixeira, J. P.; Cunha, A. F.; Leitão, J. P.; Salomé, P. M. P.
Slow-muon study of quaternary solar-cell materials: single layers and p−n junct...
Alberto, H. V.; Vilão, R. C.; Vieira, R. B. L.; Gil, J. M.; Weidinger, A.; Sousa, M. G.; Teixeira, J. P.; Cunha, A. F. da; Leitão, J. P.Thin films and p-n junctions for solar cells based on the absorber materials Cu(In,Ga)Se2 and Cu2ZnSnS4 were investigated as a function of depth using implanted low energy muons. The most significant result is a clear decrease of the formation probability of the Mu+ state at the heterojunction interface as well as at the surface of the Cu(In,Ga)Se2 film. This reduction is attributed to a reduced bonding reactio...
Low-energy muon [LEM] study of Zn-phthalocyanine and ZnO thin films
Alberto, H. V.; Piroto Duarte, J.; Weidinger, A.; Vilão, R. C.; Gil, J. M.; Ayres de Campos, N.; Fostiropoulos, K.; Prokscha, T.; Suter, A.http://www.sciencedirect.com/science/article/B6TVH-4V2NP2J-14/2/e2844eb805cd79148fe2c51116014ae6