10 documents found, page 1 of 1
Psychometric properties and correlates of Precarious Manhood Beliefs in 62 nations
Bosson, J. K.; Paweł, J.; Vandello, J. A.; Kosakowska-Berezecka, N.; Olech, M.; Besta, T.; Bender, M.; Hoorens, V.; Becker, M.; Sevincer, A. T.Precarious manhood beliefs portray manhood, relative to womanhood, as a social status that is hard to earn, easy to lose, and proven via public action. Here, we present cross-cultural data on a brief measure of precarious manhood beliefs (the Precarious Manhood Beliefs scale [PMB]) that covaries meaningfully with other cross-culturally validated gender ideologies and with country-level indices of gender equalit...
Reversible post-breakdown conduction in aluminum oxide-polymer capacitors
Chen, Q.; Gomes, Henrique L.; Rocha, Paulo R. F.; de Leeuw, D. M.; Meskers, S. C. J.Aluminum/Al2O3/polymer/metal capacitors submitted to a low-power constant current stress undergo dielectric breakdown. The post-breakdown conduction is metastable, and over time the capacitors recover their original insulating properties. The decay of the conduction with time follows a power law (1/t)(alpha). The magnitude of the exponent alpha can be raised by application of an electric field and lowered to pr...
New electronic memory device concepts based on metal oxide-polymer nanostructur...
Kiazadeh, Asal; Rocha, P. R. F.; Chen, Q.; Gomes, Henrique L.Nanostructure silver oxide thin films diodes can exhibit resistive switching effects. After an electroforming process the device can be programmed between a low conductance (off-state) and high conductance (on- state) with a voltage pulse and they are already being considered for non-volatile memory applications. However, the origin of programmable resistivity changes in a network of nanostructure silver oxide ...
Low-frequency diffusion noise in resistive-switching memories based on metal-ox...
Rocha, P. R. F.; Gomes, Henrique L.; Vandamme, L. K. J.; Chen, Q.; Kiazadeh, Asal; De Leeuw, Dago M.; Meskers, S. C. J.Low-frequency noise is studied in resistive-switching memories based on metal–oxide polymer diodes. The noise spectral power follows a 1/fγ behavior, with γ = 1 in the ohmic region and with γ = 3/2 at high bias beyond the ohmic region. The exponent γ = 3/2 is explained as noise caused by Brownian motion or diffusion of defects which induce fluctuations in diode current. The figure of merit to classify 1/f noise...
Dynamic behavior of resistive random access memories (RRAMS) based on plastic s...
Rocha, Paulo R. F.; Kiazadeh, Asal; Chen, Q.; Gomes, Henrique L.Resistive Random Access Memories based on metal-oxide polymer diodes are characterized. The dynamic behavior is studied by recording current-voltage characteristics with varying voltage ramp speed. It is demonstrated that these organic memory devices have an internal capacitive double-layer structure, which inhibits the switching at high ramp rates (1000 V/s). This behavior is modeled and explained in terms of ...
Electroforming process in metal-oxide-polymer resistive switching memories
Chen, Q.; Gomes, Henrique L.; Kiazadeh, Asal; Rocha, Paulo R. F.; De Leeuw, Dago M.; Meskers, S. C. J.Electroforming of an Al/Al2O3/polymer/Al esistive switching diode is reported. Electroforming is a dielectric soft-breakdown mechanism leading to hysteretic current–voltage characteristics and non–volatile memory behavior. Electron trapping occurs at early stages of electroforming. Trapping is physically located at the oxide/polymer interface. The detrapping kinetics is faster under reverse bias and for thicker...
Resistive Random Access Memories (RRAMs) Based on Metal Nanoparticles
Kiazadeh, Asal; Rocha, P. R.; Chen, Q.; Gomes, Henrique L.It is demonstrated that planar structures based on silver nanoparticleshosted in a polymer matrix show reliable and reproducible switching properties attractive for non-volatile memory applications. These systems can be programmed between a low conductance (off-state) and high conductance (on-state) with an on/off ratio of 3 orders of magnitude, large retention times and good cycle endurance. The planar structu...
Opto-electronic characterization of electron traps upon forming polymer oxide m...
Chen, Q.; Bory, Benjamin F.; Kiazadeh, Asal; Rocha, Paulo R. F.; Gomes, Henrique L.; Verbakel, F.; De Leeuw, Dago M.; Meskers, S. C. J.Metal-insulator-polymer diodes where the insulator is a thin oxide (Al2O3) layer are electroformed by applying a high bias. The initial stage is reversible and involves trapping of electrons near the oxide/polymer interface. The rate of charge trapping is limited by electron transport through the polymer. Detrapping of charge stored can be accomplished by illuminating with light under short-circuit conditions. ...
Switching speed in resistive random access memories (RRAMS) based on plastic se...
Rocha, P. F.; Gomes, Henrique L.; Kiazadeh, Asal; Chen, Q.; De Leeuw, D. M.; Meskers, S. C. J.This work addresses non-volatile memories based on metal-oxide polymer diodes. We make a thorough investigation into the static and dynamic behavior. Current-voltage characteristics with varying voltage ramp speed demonstrate that the internal capacitive double-layer structure inhibits the switching at high ramp rates (typical 1000 V/s). This behavior is explained in terms of an equivalent circuit. It is also r...
Planar non-volatile memory based on metal nanoparticles
Kiazadeh, Asal; Gomes, Henrique L.; Costa, Ana M. Rosa da; Rocha, P. R. F.; Chen, Q.; Moreira, José; De Leeuw, Dago M.; Meskers, S. C. J.Resistive switching properties of silver nanoparticles hosted in an insulating polymer matrix (poly(N-vinyl-2-pyrrolidone) are reported. Planar devices structures using interdigitated gold electrodes were fabricated. These devices have on/off resistance ratio as high as 103 , retention times reaching to months and good endurance cycles. Temperature-dependent measurements show that the charge transport is weakly...