9 documents found, page 1 of 1
Cu(In,Ga)Se2 based ultrathin solar cells the pathway from lab rigid to large sc...
Lopes, T. S.; Teixeira, J. P.; Curado, M. A.; Ferreira, B. R.; Oliveira, A. J. N.; Cunha, J. M. V.; Monteiro, M.; Violas, A.; Barbosa, J. R. S.The incorporation of interface passivation structures in ultrathin Cu(In,Ga)Se2 based solar cells is shown. The fabrication used an industry scalable lithography technique—nanoimprint lithography (NIL)—for a 15 × 15 cm2 dielectric layer patterning. Devices with a NIL nanopatterned dielectric layer are benchmarked against electron-beam lithography (EBL) patterning, using rigid substrates. The NIL patterned devic...
Cu(In,Ga)Se2 based ultrathin solar cells the pathway from lab rigid to large sc...
Lopes, T. S.; Teixeira, J. P.; Curado, M. A.; Ferreira, B. R.; Oliveira, A. J. N.; Cunha, J. M. V.; Monteiro, M.; Violas, A.; Barbosa, J. R. S.The incorporation of interface passivation structures in ultrathin Cu(In,Ga)Se2 based solar cells is shown. The fabrication used an industry scalable lithography technique—nanoimprint lithography (NIL)—for a 15 × 15 cm2 dielectric layer patterning. Devices with a NIL nanopatterned dielectric layer are benchmarked against electron-beam lithography (EBL) patterning, using rigid substrates. The NIL patterned devic...
Cu(In,Ga)Se2 based ultrathin solar cells the pathway from lab rigid to large sc...
Lopes, T.S.; Teixeira, J. P.; Curado, M. A.; Ferreira, B. R.; Oliveira, A. J. N.; Cunha, J. M. V.; Monteiro, M.; Violas, A.; Barbosa, J. R. S.The incorporation of interface passivation structures in ultrathin Cu(In,Ga)Se2 based solar cells is shown. The fabrication used an industry scalable lithography technique—nanoimprint lithography (NIL)—for a 15 × 15 cm2 dielectric layer patterning. Devices with a NIL nanopatterned dielectric layer are benchmarked against electron-beam lithography (EBL) patterning, using rigid substrates. The NIL patterned devic...
Electronic Conduction Mechanisms and Defects in Polycrystalline Antimony Selenide
Cifuentes, N.; Ghosh, Santunu; Shongolova, A.; Correia, M. R.; Salomé, P. M. P.; Fernandes, P. A.; Ranjbar, S.; Garud, S.; Vermang, B.; Ribeiro, G. M.A study of the electronic conduction mechanisms and electrically active defects in polycrystalline Sb2Se3 is presented. It is shown that for temperatures above 200 K, the electrical transport is dominated by thermal emission of free holes, ionized from shallow acceptors, over the intergrain potential barriers. In this temperature range, the temperature dependence of the mobility of holes, limited by the intergr...
Electronic conduction mechanisms and defects in polycrystalline antimony selenide
Cifuentes, N.; Ghosh, S.; Shongolova, A.; Correia, M. R.; Salomé, P. M. P.; Fernandes, P. A.; Ranjbar, S.; Garud, S.; Vermang, B.; Ribeiro, G. M.A study on the electronic conduction mechanisms and electrically active defects in polycrystalline Sb2Se3 is presented. It is shown that, for temperatures above 200 K the electrical transport is dominated by thermal emission of free holes, ionized from shallow acceptors, over the inter-grain potential barriers. The temperature dependence of the holes mobility, limited by the inter-grain potential barriers, is t...
Voids in kesterites and the influence of lamellae preparation by focused ion be...
Ribeiro-Andrade, R.; Sahayaraj, S.; Vermang, B.; Correia, M. R.; Sadewasser, S.; Gonzalez, J. C.; Fernandes, P. A.; Salomé, P. M. P.Kesterite solar cells based in Cu2ZnSnS4 and Cu2ZnSnSe4 are potential future candidates to be used in thin film solar cells. The technology still has to be developed to a great extent and for this to happen, high levels of confidence in the characterization methods are required so that improvements can be made on solid interpretations. In this study we show that the interpretations of one of the most used chara...
Insulator materials for interface passivation of Cu(In,Ga)Se2 thin films
Cunha, J. M. V.; Fernandes, P. A.; Hultqvist, A.; Teixeira, J. P.; Bose, S.; Vermang, B.; Garud, S.; Buldu, D.; Gaspar, J.; Edoff, M.; Leitão, J. P.In this work, Metal-Insulator-Semiconductor (MIS) structures were fabricated in order to study different types of insulators, namely, aluminum oxide (Al2O3), silicon nitride (Si3Nx) and silicon oxide (SiOx) to be used as passivation layers in Cu(In,Ga)Se2 (CIGS) thin film solar cells. The investigated stacks consisted of SLG/Mo/CIGS/insulator/Al. Raman scattering and Photoluminescence measurements were done to ...
On the identification of Sb2Se3 using Raman scattering
Shongalova, A.; Correia, M. R.; Vermang, B.; Cunha, J. M. V.; Salomé, P. M. P.; Fernandes, P. A.Robust evidences are presented that show that the Raman mode close to 250 cm-1 in Sb2Se3 thin films does not belong to this binary compound. A study of the Raman spectrum power dependency revealed the formation of Sb2O3 for high values of power excitation when these measurements are done in normal atmospheric conditions. In order to complement this study, Sb2Se3 thin films were annealed to mimic the thermal con...
Growth of Sb2Se3 thin films by selenization of RF sputtered binary precursors
Shongalova, A.; Correia, M. R.; Teixeira, J. P.; Leitão, J. P.; González, J. C.; Ranjbar, S.; Garud, S.; Vermang, B.; Cunha, J. M. V.; Salomé, P. M. P.In this work we present a method to grow Sb2Se3 thin films with a potential use as absorber layers in solar cell structures. The films were grown on several substrates: soda-lime glass, Mo coated soda-lime glass and Si . The Sb-Se precursor’s films were deposited by RF magnetron sputtering and then selenized under a H2Se gas flow. Different selenization temperatures were tested and analysed. Compositional and m...