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Perovskite Metal-Oxide-Semiconductor Structures for Interface Characterization

Cunha, J.M.V.; Barreiros, M. Alexandra; Curado, M.A.; Lopes, T.S.; Oliveira, K.; Oliveira, A.J.N.; Barbosa, J.R.S.; Vilanova, António

ABSTRACT: Perovskite solar cells (PSCs) are one of the most promising photovoltaic technologies. Amongst several challenges, developing and optimizing efficient electron transport layers that can be up-scaled still remains a massive task. Admittance measurements on metal-oxide-semiconductor (MOS) devices allow to better understand the optoelectronic properties of the interface between perovskite and the charge ...

Date: 2021   |   Origin: Repositório do LNEG

Perovskite Metal-Oxide-Semiconductor Structures for Interface Characterization

Cunha, J.M.V.; Barreiros, M. Alexandra; Curado, M.A.; Lopes, T.S.; Oliveira, K.; Oliveira, A.J.N.; Barbosa, J.R.S.; Vilanova, António

ABSTRACT: Perovskite solar cells (PSCs) are one of the most promising photovoltaic technologies. Amongst several challenges, developing and optimizing efficient electron transport layers that can be up-scaled still remains a massive task. Admittance measurements on metal-oxide-semiconductor (MOS) devices allow to better understand the optoelectronic properties of the interface between perovskite and the charge ...

Date: 2021   |   Origin: Repositório do LNEG

Metal-Oxide-Semiconductor devices for interface studies for perovskite technolo...

Cunha, J.M.V.; Barreiros, M. Alexandra; Teixeira, J.P.; Curado, M.A.; Lopes, T.S.; Oliveira, K.; Oliveira, A.J.N.; Barbosa, J.R.S.; Vilanova, António

Date: 2021   |   Origin: Repositório do LNEG

Perovskite metal–oxide–semiconductor structures for interface characterization

Cunha, José M. V.; Barreiros, M. Alexandra; Curado, Marco A.; Lopes, Tomás S.; Oliveira, Kevin; Oliveira, António J. N.; Barbosa, João R. S.

Perovskite solar cells (PSCs) are one of the most promising photovoltaic technologies. Amongst several challenges, developing and optimizing efficient electron transport layers (ETLs) that can be up-scaled still remains a massive task. Admittance measurements on Metal-Oxide-Semiconductor (MOS) devices allow to better understand the optoelectronic properties of the interface between perovskite and the charge car...


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