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Optoelectronic Study of Perovskites/SnO2 based Metal-Insulator-Semiconductor St...
Cunha, J.M.V.; Barreiros, M. Alexandra; Curado, M.A.; Lopes, T.S.; Oliveira, K.; Oliveira, A.J.N.; Vinhais, C.; Flandre, Denis; Teixeira, J.P.
O poder da nanofabricação: substratos de alta performance para células solares ...
Teixeira, J.T.; Lopes, T.S.; Oliveira, K.; Curado, M.A.; Cunha, J.M.V.; Ribeiro, R.M.; Oliveira, A.J.N.; Barbosa, J.R.S.; Violas, A.; Rocha, C.RESUMO: O grupo de Nanofabrication for Optoelectronic Applications -NOA- inserido no International Iberian Nanotechnology Laboratory (INL) tem focado grande parte da sua investigação e operações no desenvolvimento de substratos de alta performance, baseados em diferentes esquemas de manipulação da luz para aplicação em células solares de Cu(In,Ga)Se2 (CIGS). Estes substratos baseiam-se na inserção de uma camada...
O poder da nanofabricação: substratos de alta performance para células solares ...
Teixeira, J.T.; Lopes, T.S.; Oliveira, K.; Curado, M.A.; Cunha, J.M.V.; Ribeiro, R.M.; Oliveira, A.J.N.; Barbosa, J.R.S.; Violas, A.; Rocha, C.RESUMO: O grupo de Nanofabrication for Optoelectronic Applications -NOA- inserido no International Iberian Nanotechnology Laboratory (INL) tem focado grande parte da sua investigação e operações no desenvolvimento de substratos de alta performance, baseados em diferentes esquemas de manipulação da luz para aplicação em células solares de Cu(In,Ga)Se2 (CIGS). Estes substratos baseiam-se na inserção de uma camada...
Front passivation of Cu(In,Ga)Se2 solar cells using Al2O3: Culprits and benefits
Curado, M.A.; Teixeira, J.P.; Monteiro, M.; Ribeiro, E.F.M.; Vilão, R.C.; Alberto, H.V.; Cunha, J.M.V.; Lopes, T.S.; Oliveira, K.; Donzel-Gargand, O.In the past years, the strategies used to break the Cu(In,Ga)Se2 (CIGS) light to power conversion efficiency world record value were based on improvements of the absorber optoelectronic and crystalline properties, mainly using complex post-deposition treatments. To reach even higher efficiency values, further advances in the solar cell architecture are needed, in particular, with respect to the CIGS interfaces....
Front passivation of Cu(In,Ga)Se2 solar cells using Al2O3: culprits and benefits
Curado, M. A.; Teixeira, J. P.; Monteiro, M.; Ribeiro, E. F. M.; Vilão, R.C.; Alberto, H. V.; Cunha, J. M. V.; Lopes, T.S.; Oliveira, K.In recent years, the strategies used to break the Cu(In,Ga)Se2 (CIGS) world record of light to power conversion efficiency, were based on improvements of the absorber optoelectronic and crystalline properties, mainly using complex post-deposition treatments. To reach even higher efficiency values, advances in the solar cell architecture are needed focusing in the CIGS interfaces. In this study, we evaluate the ...
Equivalent circuit for AC response of Cu(In,Ga)Se2 thin film solar cells
Cunha, J. M. V.; Rocha, C.; Vinhais, C.; Fernandes, P. A.; Salomé, P. M. P.Ultrathin Cu(In,Ga)Se2 (CIGS) is desired to reduce production costs of CIGS solar cells. The present work aims to study the AC electrical response of standard-thick, ultrathin and passivated ultrathin devices. Admittance measurements allow to choose the AC equivalent circuit for each type of CIGS device. It is of utmost importance to understand the AC electrical behavior of each device, as the differences betwe...
Understanding the AC equivalent circuit response of ultrathin Cu(In,Ga)Se2 sola...
Cunha, J. M.V.; Rocha, C.; Vinhais, C.; Fernandes, P. A.; Salomé, P. M. P.The present work aims to study the AC electrical response of standard-thick, ultrathin and passivated ultrathin CIGS solar cells. Ultrathin Cu(In,Ga)Se2 (CIGS) is desired to reduce production costs of CIGS solar cells. Equivalent circuits for modeling the behavior of each type of solar cells in AC regime are based on admittance measurements. It is of the utmost importance to understand the AC electrical behavio...