The incorporation of interface passivation structures in ultrathin Cu(In,Ga)Se2 based solar cells is shown. The fabrication used an industry scalable lithography technique—nanoimprint lithography (NIL)—for a 15 × 15 cm2 dielectric layer patterning. Devices with a NIL nanopatterned dielectric layer are benchmarked against electron-beam lithography (EBL) patterning, using rigid substrates. The NIL patterned devic...
The incorporation of interface passivation structures in ultrathin Cu(In,Ga)Se2 based solar cells is shown. The fabrication used an industry scalable lithography technique—nanoimprint lithography (NIL)—for a 15 × 15 cm2 dielectric layer patterning. Devices with a NIL nanopatterned dielectric layer are benchmarked against electron-beam lithography (EBL) patterning, using rigid substrates. The NIL patterned devic...
The incorporation of interface passivation structures in ultrathin Cu(In,Ga)Se2 based solar cells is shown. The fabrication used an industry scalable lithography technique—nanoimprint lithography (NIL)—for a 15 × 15 cm2 dielectric layer patterning. Devices with a NIL nanopatterned dielectric layer are benchmarked against electron-beam lithography (EBL) patterning, using rigid substrates. The NIL patterned devic...
RESUMO: O grupo de Nanofabrication for Optoelectronic Applications -NOA- inserido no International Iberian Nanotechnology Laboratory (INL) tem focado grande parte da sua investigação e operações no desenvolvimento de substratos de alta performance, baseados em diferentes esquemas de manipulação da luz para aplicação em células solares de Cu(In,Ga)Se2 (CIGS). Estes substratos baseiam-se na inserção de uma camada...
RESUMO: O grupo de Nanofabrication for Optoelectronic Applications -NOA- inserido no International Iberian Nanotechnology Laboratory (INL) tem focado grande parte da sua investigação e operações no desenvolvimento de substratos de alta performance, baseados em diferentes esquemas de manipulação da luz para aplicação em células solares de Cu(In,Ga)Se2 (CIGS). Estes substratos baseiam-se na inserção de uma camada...