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Growth and characterization of Bi2Se3 thin films by pulsed laser deposition usi...

Meng Lijian; Meng Hui; Gong Wenjie; Liu Wei; Zhang Zhidong

Bi2Se3 thin films were deposited on the (100) oriented Si substrates by pulsed laser deposition technique at different substrate temperatures (room temperature – 400 ºC). The effects of the substrate temperature on the structural and electrical properties of the Bi2Se3 films were studied. The film prepared at room temperature showed a very poor polycrystalline structure with the mainly orthorhombic phase. The c...

Date: 2011   |   Origin: RepositóriUM - Universidade do Minho
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