Autor(es):
Gomes, Paulo Freitas, 1981- ; Iikawa, Fernando, 1960- ; Cerdeira, Fernando, 1943-
Data: 2007
Identificador Persistente: https://hdl.handle.net/20.500.12733/1666232
Origem: Oasisbr
Assunto(s): Pontos quânticos; Semicondutores; Fotoluminescência; Quantum dots; Semiconductors; Photoluminescence; Artigo original; Pontos quânticos; Pontos quânticos; Semicondutores; Semicondutores; Fotoluminescência; Fotoluminescência; Quantum dots; Quantum dots; Semiconductors; Semiconductors; Photoluminescence; Photoluminescence; Artigo original; Artigo original
Descrição
Agradecimentos: The authors acknowledge financial support from FAPESP, CAPES, and CNPq in Brazil and SSF in Sweden, and thank Milton Tanabe and Claudecir Biazoli for technical support
Abstract: The authors studied the optical emission of Ge/Si quantum dots under externally applied biaxial stress using samples grown with different temperatures varying from 430 to 700 degrees C. The optical emission energy of samples grown at low temperatures is rather insensitive to the applied external stress, consistent with the type-II band alignment. However, for samples grown at high temperatures we observed a large blueshift, which suggests type-I alignment. The result implies that recombination strength can be controlled by the growth temperature, which can be useful for optical device applications
FUNDAÇÃO DE AMPARO À PESQUISA DO ESTADO DE SÃO PAULO - FAPESP
COORDENAÇÃO DE APERFEIÇOAMENTO DE PESSOAL DE NÍVEL SUPERIOR - CAPES
CONSELHO NACIONAL DE DESENVOLVIMENTO CIENTÍFICO E TECNOLÓGICO - CNPQ
Fechado
