Author(s):
Veloso, Aline Bessa, 1982- ; Nakaema, Marcelo Kiyoshi Kian, 1971- ; Godoy, Marcio Peron Franco de, 1975- ; Lopes, João Marcelo Jordão ; Iikawa, Fernando, 1960- ; Brasil, Maria José Santos Pompeu, 1961- ; Bortoleto, José Roberto Ribeiro, 1974- ; Cotta, Mônica Alonso, 1963-
Date: 2007
Persistent ID: https://hdl.handle.net/20.500.12733/1666270
Origin: Oasisbr
Subject(s): Pontos quânticos; Fotoluminescência; Semicondutores; Quantum dots; Photoluminescence; Semiconductors; Artigo original; Pontos quânticos; Pontos quânticos; Fotoluminescência; Fotoluminescência; Semicondutores; Semicondutores; Quantum dots; Quantum dots; Photoluminescence; Photoluminescence; Semiconductors; Semiconductors; Artigo original; Artigo original
Description
Abstract: We investigated two stacked layers of InP/GaAs type-II quantum dots by transmission electron microscopy and optical spectroscopy. The results reveal that InP quantum dots formed in two quantum dot layers are more uniform than those from a single layer structure. The thermal activation energies as well as the photoluminescence decays are rather independent of the separation between quantum dot layers and the presence of the second layer. The quantum dot optical emission persists for thermal activation energy larger than the calculated exciton binding energy. The hotoluminescence decay is relatively fast for type-II alignment
FUNDAÇÃO DE AMPARO À PESQUISA DO ESTADO DE SÃO PAULO - FAPESP
COORDENAÇÃO DE APERFEIÇOAMENTO DE PESSOAL DE NÍVEL SUPERIOR - CAPES
CONSELHO NACIONAL DE DESENVOLVIMENTO CIENTÍFICO E TECNOLÓGICO - CNPQ
Aberto
