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Niobium oxide films deposited by reactive sputtering: Effect of oxygen flow rate

Author(s): Fernandes, Silvia L. ; Affonço, Lucas J. [UNESP] ; Junior, Roberto A. R. [UNESP] ; da Silva, José H. D. [UNESP] ; Longo, Elson ; Graeff, Carlos F. de O. [UNESP]

Date: 2020

Persistent ID: http://hdl.handle.net/11449/201216

Origin: Oasisbr

Subject(s): Chemistry; Compact films; Conductivity; Electron transport layer; Issue 151; Niobium oxide film; Perovskite solar cell; Reactive sputtering; Chemistry; Chemistry; Compact films; Compact films; Conductivity; Conductivity; Electron transport layer; Electron transport layer; Issue 151; Issue 151; Niobium oxide film; Niobium oxide film; Perovskite solar cell; Perovskite solar cell; Reactive sputtering; Reactive sputtering


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Made available in DSpace on 2020-12-12T02:27:01Z (GMT). No. of bitstreams: 0 Previous issue date: 2019-01-01

Fundação de Amparo à Pesquisa do Estado de São Paulo (FAPESP)

Reactive sputtering is a versatile technique used to form compact films with excellent homogeneity. In addition, it allows easy control over deposition parameters such as gas flow rate that results in changes on composition and thus in the film required properties. In this report, reactive sputtering is used to deposit niobium oxide films. A niobium target is used as metal source and different oxygen flow rates to deposit niobium oxide films. The oxygen flow rate was changed from 3 to 10 sccm. The films deposited under low oxygen flow rates show higher electrical conductivity and provide better perovskite solar cells when used as electron transport layer.

Chemistry Department Federal University of São Carlos (UFSCAR)

Physics Department School of Sciences São Paulo State University (UNESP)

Physics Department School of Sciences São Paulo State University (UNESP)

FAPESP: 2013/07296-2

FAPESP: 2013/09963-6

FAPESP: 2017/11072-3

FAPESP: 2017/18916-2

Document Type Journal article
Language English
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