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Charge storage behavior of nanostructures based on SiGe nanocrystals embedded in Al2O3 matrix

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Resumo:The charge storage behavior of nanostructures based on Si1−xGex (0 ≤ x ≤ 1) nanocrystals (NCs) in an Al2O3 matrix was investigated. The structures have been grown by RF magnetron sputtering and subsequently annealed at temperatures ranging from 700 ºC to 1000 ºC for 30 min in nitrogen ambient. The stoichiometry of the SiGe NCs and the alumina crystalline structure were found to be significantly dependent on the RF power and the annealing temperature. The sizes of the SiGe NCs and their distribution were investigated by grazing incidence small angle X-ray scattering (GISAXS). The capacitance-voltage (C-V) and conductance-voltage (G-V) measurements were performed to investigate the charge trapping characteristics of the memory structures. The C-V hysteresis width depends on variations in the crystalline structure resulting from different annealing temperatures. It is also shown that charge injection is governed by the Fowler-Nordheim tunnel mechanism for higher electric fields.
Autores principais:Vieira, E. M. F.
Outros Autores:Levichev, S.; Dias, Carlos J.; Igreja, Rui; Buljan, M.; Bernstorff, S.; Conde, Olinda; Chahboun, A.; Rolo, Anabela G.; Gomes, M. J. M.
Assunto:Charge storage SiGe Nanocrystals RF sputtering Capacitance-voltage Conductance-voltage Memory effect MOS nanostructure
Ano:2013
País:Portugal
Tipo de documento:artigo
Tipo de acesso:acesso restrito
Instituição associada:Universidade do Minho
Idioma:inglês
Origem:RepositóriUM - Universidade do Minho

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