Publicação
ZnO thin films implanted with Al, Sb and P: optical, structural and electrical characterization
| Resumo: | In this work we report a study on the structure, optical and electrical properties of P, Sb and Al implanted ZnO thin films that had been produced by r.f. magnetron sputtering. The influence of the different replacing atoms on the structure and properties of the films has been explored. Looking for the best annealing conditions, two different annealing temperatures (300ºC and 500ºC) have been employed. Raman spectroscopy, X-ray photoelectron spectroscopy (XPS), X-ray diffraction, transmittance and d.c conductivity measurements have been used to characterize the samples. X-ray diffraction and Raman scattering patterns confirm that after annealing, doped films keep a polycrystalline nature with (002) preferred orientation. These films remain very transparent and the electrical conductivity increases significantly after the 500ºC annealing, reaching values of 10.9 (cm)-1 in the P-doped, 10.33 (cm)-1 in the Al-doped and 0.56 (cm)-1 in the Sb-doped samples |
|---|---|
| Autores principais: | Viseu, T. M. R. |
| Outros Autores: | Campos, J. Ayres de; Rolo, Anabela G.; Arôso, T. de Lacerda; Cerqueira, M. F.; Alves, E. |
| Assunto: | ZnO Ion implantation Optical properties Raman X-ray |
| Ano: | 2009 |
| País: | Portugal |
| Tipo de documento: | artigo |
| Tipo de acesso: | acesso aberto |
| Instituição associada: | Universidade do Minho |
| Idioma: | inglês |
| Origem: | RepositóriUM - Universidade do Minho |
| _version_ | 1867437980250013696 |
|---|---|
| author | Viseu, T. M. R. |
| author2 | Campos, J. Ayres de Rolo, Anabela G. Arôso, T. de Lacerda Cerqueira, M. F. Alves, E. |
| author2_role | author author author author author |
| author_facet | Viseu, T. M. R. Campos, J. Ayres de Rolo, Anabela G. Arôso, T. de Lacerda Cerqueira, M. F. Alves, E. |
| author_role | author |
| contributor_name_str_mv | RepositóriUM - Universidade do Minho |
| country_str | PT |
| creators_json_txt | [{\"Person.name\":\"Viseu, T. M. R.\"},{\"Person.name\":\"Campos, J. Ayres de\"},{\"Person.name\":\"Rolo, Anabela G.\"},{\"Person.name\":\"Arôso, T. de Lacerda\"},{\"Person.name\":\"Cerqueira, M. F.\"},{\"Person.name\":\"Alves, E.\"}] |
| datacite.contributors.contributor.contributorName.fl_str_mv | RepositóriUM - Universidade do Minho |
| datacite.creators.creator.creatorName.fl_str_mv | Viseu, T. M. R. Campos, J. Ayres de Rolo, Anabela G. Arôso, T. de Lacerda Cerqueira, M. F. Alves, E. |
| datacite.date.Accepted.fl_str_mv | 2009-01-01T00:00:00Z |
| datacite.date.available.fl_str_mv | 2011-09-30T14:43:23Z |
| datacite.date.embargoed.fl_str_mv | 2011-09-30T14:43:23Z |
| datacite.rights.fl_str_mv | http://purl.org/coar/access_right/c_abf2 |
| datacite.subjects.subject.fl_str_mv | ZnO Ion implantation Optical properties Raman X-ray |
| datacite.titles.title.fl_str_mv | ZnO thin films implanted with Al, Sb and P: optical, structural and electrical characterization |
| dc.contributor.none.fl_str_mv | RepositóriUM - Universidade do Minho |
| dc.creator.none.fl_str_mv | Viseu, T. M. R. Campos, J. Ayres de Rolo, Anabela G. Arôso, T. de Lacerda Cerqueira, M. F. Alves, E. |
| dc.date.Accepted.fl_str_mv | 2009-01-01T00:00:00Z |
| dc.date.available.fl_str_mv | 2011-09-30T14:43:23Z |
| dc.date.embargoed.fl_str_mv | 2011-09-30T14:43:23Z |
| dc.format.none.fl_str_mv | application/pdf |
| dc.identifier.none.fl_str_mv | https://hdl.handle.net/1822/13749 |
| dc.language.none.fl_str_mv | eng |
| dc.publisher.none.fl_str_mv | American Scientific Publishers |
| dc.rights.none.fl_str_mv | http://purl.org/coar/access_right/c_abf2 |
| dc.subject.none.fl_str_mv | ZnO Ion implantation Optical properties Raman X-ray |
| dc.title.fl_str_mv | ZnO thin films implanted with Al, Sb and P: optical, structural and electrical characterization |
| dc.type.none.fl_str_mv | http://purl.org/coar/resource_type/c_6501 |
| description | In this work we report a study on the structure, optical and electrical properties of P, Sb and Al implanted ZnO thin films that had been produced by r.f. magnetron sputtering. The influence of the different replacing atoms on the structure and properties of the films has been explored. Looking for the best annealing conditions, two different annealing temperatures (300ºC and 500ºC) have been employed. Raman spectroscopy, X-ray photoelectron spectroscopy (XPS), X-ray diffraction, transmittance and d.c conductivity measurements have been used to characterize the samples. X-ray diffraction and Raman scattering patterns confirm that after annealing, doped films keep a polycrystalline nature with (002) preferred orientation. These films remain very transparent and the electrical conductivity increases significantly after the 500ºC annealing, reaching values of 10.9 (cm)-1 in the P-doped, 10.33 (cm)-1 in the Al-doped and 0.56 (cm)-1 in the Sb-doped samples |
| dirty | 0 |
| eu_rights_str_mv | openAccess |
| format | article |
| fulltext.url.fl_str_mv | https://repositorium.uminho.pt/bitstreams/d914b16d-2a7c-4ed2-a5ce-937de54d1e68/download |
| id | rum_f309abe9c963a9cd1bebe8cfd3fa9bb5 |
| identifier.url.fl_str_mv | https://hdl.handle.net/1822/13749 |
| instacron_str | repositorium |
| institution | Universidade do Minho |
| instname_str | Universidade do Minho |
| language | eng |
| network_acronym_str | rum |
| network_name_str | RepositóriUM - Universidade do Minho |
| oai_identifier_str | oai:repositorium.uminho.pt:1822/13749 |
| organization_str_mv | urn:organizationAcronym:repositorium |
| person_str_mv | Viseu, T. M. R. Campos, J. Ayres de Rolo, Anabela G. Arôso, T. de Lacerda Cerqueira, M. F. Alves, E. |
| publishDate | 2009 |
| publisher.none.fl_str_mv | American Scientific Publishers |
| reponame_str | RepositóriUM - Universidade do Minho |
| repository_id_str | urn:repositoryAcronym:rum |
| service_str_mv | urn:repositoryAcronym:rum |
| spelling | engAmerican Scientific PublishersporIn this work we report a study on the structure, optical and electrical properties of P, Sb and Al implanted ZnO thin films that had been produced by r.f. magnetron sputtering. The influence of the different replacing atoms on the structure and properties of the films has been explored. Looking for the best annealing conditions, two different annealing temperatures (300ºC and 500ºC) have been employed. Raman spectroscopy, X-ray photoelectron spectroscopy (XPS), X-ray diffraction, transmittance and d.c conductivity measurements have been used to characterize the samples. X-ray diffraction and Raman scattering patterns confirm that after annealing, doped films keep a polycrystalline nature with (002) preferred orientation. These films remain very transparent and the electrical conductivity increases significantly after the 500ºC annealing, reaching values of 10.9 (cm)-1 in the P-doped, 10.33 (cm)-1 in the Al-doped and 0.56 (cm)-1 in the Sb-doped samplesapplication/pdfporZnO thin films implanted with Al, Sb and P: optical, structural and electrical characterizationViseu, T. M. R.Campos, J. Ayres deRolo, Anabela G.Arôso, T. de LacerdaCerqueira, M. F.Alves, E.HostingInstitutionOrganizationalRepositóriUM - Universidade do Minhoe-mailmailto:repositorium@usdb.uminho.ptrepositorium@usdb.uminho.ptCITATIONViseu, T., de Campos, J. A., Rolo, A. G., de Lacerda-Arôso, T., Cerqueira, M. F., & Alves, E. (2009, June 1). ZnO Thin Films Implanted with Al, Sb and P: Optical, Structural and Electrical Characterization. Journal of Nanoscience and Nanotechnology. American Scientific Publishers. http://doi.org/10.1166/jnn.2009.ns32ISSNIsPartOf1533-4880DOIIsPartOf10.1166/jnn.2009.NS322011-09-30T14:43:23Z20092009-01-01T00:00:00ZHandlehttps://hdl.handle.net/1822/13749http://purl.org/coar/access_right/c_abf2open accessZnOIon implantationOptical propertiesRamanX-ray217597 bytesliteraturehttp://purl.org/coar/resource_type/c_6501journal articlehttp://purl.org/coar/access_right/c_abf2application/pdffulltexthttps://repositorium.uminho.pt/bitstreams/d914b16d-2a7c-4ed2-a5ce-937de54d1e68/download |
| spellingShingle | ZnO thin films implanted with Al, Sb and P: optical, structural and electrical characterization Viseu, T. M. R. ZnO Ion implantation Optical properties Raman X-ray |
| status | SINGLETON |
| subject.fl_str_mv | ZnO Ion implantation Optical properties Raman X-ray |
| title | ZnO thin films implanted with Al, Sb and P: optical, structural and electrical characterization |
| title_full | ZnO thin films implanted with Al, Sb and P: optical, structural and electrical characterization |
| title_fullStr | ZnO thin films implanted with Al, Sb and P: optical, structural and electrical characterization |
| title_full_unstemmed | ZnO thin films implanted with Al, Sb and P: optical, structural and electrical characterization |
| title_short | ZnO thin films implanted with Al, Sb and P: optical, structural and electrical characterization |
| title_sort | ZnO thin films implanted with Al, Sb and P: optical, structural and electrical characterization |
| topic | ZnO Ion implantation Optical properties Raman X-ray |
| topic_facet | ZnO Ion implantation Optical properties Raman X-ray |
| url | https://hdl.handle.net/1822/13749 |
| visible | 1 |