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AlNxOy thin films deposited by DC reactive magnetron sputtering

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Resumo:AlNxOy thin films were produced by DC reactive magnetron sputtering, using an atmosphere of argon and a reactive gas mixture of nitrogen and oxygen, for a wide range of partial pressures of reactive gas. During the deposition, the discharge current was kept constant and the discharge parameters were monitored. The deposition rate, chemical composition, morphology, structure and electrical resistivity of the coatings are strongly correlated with discharge parameters. Varying the reactive gas mixture partial pressure, the film properties change gradually from metallic-like films, for low reactive gas partial pressures, to stoichiometric amorphous Al2O3 insulator films, at high pressures. For intermediate reactive gas pressures, sub-stoichiometric AlN x O y films were obtained, with the electrical resistivity of the films increasing with the non metallic/metallic ratio.
Autores principais:Borges, Joel Nuno Pinto
Outros Autores:Vaz, F.; Marques, L.
Assunto:Aluminium oxide Aluminium nitride DC magnetron Reactive sputtering Morphology Structure Electrical resistivity
Ano:2010
País:Portugal
Tipo de documento:artigo
Tipo de acesso:acesso aberto
Instituição associada:Universidade do Minho
Idioma:inglês
Origem:RepositóriUM - Universidade do Minho
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author Borges, Joel Nuno Pinto
author2 Vaz, F.
Marques, L.
author2_role author
author
author_facet Borges, Joel Nuno Pinto
Vaz, F.
Marques, L.
author_role author
contributor_name_str_mv RepositóriUM - Universidade do Minho
country_str PT
creators_json_txt [{\"Person.name\":\"Borges, Joel Nuno Pinto\"},{\"Person.name\":\"Vaz, F.\"},{\"Person.name\":\"Marques, L.\"}]
datacite.contributors.contributor.contributorName.fl_str_mv RepositóriUM - Universidade do Minho
datacite.creators.creator.creatorName.fl_str_mv Borges, Joel Nuno Pinto
Vaz, F.
Marques, L.
datacite.date.Accepted.fl_str_mv 2010-01-01T00:00:00Z
datacite.date.available.fl_str_mv 2010-10-29T13:43:26Z
datacite.date.embargoed.fl_str_mv 2010-10-29T13:43:26Z
datacite.rights.fl_str_mv http://purl.org/coar/access_right/c_abf2
datacite.subjects.subject.fl_str_mv Aluminium oxide
Aluminium nitride
DC magnetron
Reactive sputtering
Morphology
Structure
Electrical resistivity
datacite.titles.title.fl_str_mv AlNxOy thin films deposited by DC reactive magnetron sputtering
dc.contributor.none.fl_str_mv RepositóriUM - Universidade do Minho
dc.creator.none.fl_str_mv Borges, Joel Nuno Pinto
Vaz, F.
Marques, L.
dc.date.Accepted.fl_str_mv 2010-01-01T00:00:00Z
dc.date.available.fl_str_mv 2010-10-29T13:43:26Z
dc.date.embargoed.fl_str_mv 2010-10-29T13:43:26Z
dc.format.none.fl_str_mv application/pdf
dc.identifier.none.fl_str_mv https://hdl.handle.net/1822/10981
dc.language.none.fl_str_mv eng
dc.publisher.none.fl_str_mv Elsevier
dc.rights.none.fl_str_mv http://purl.org/coar/access_right/c_abf2
dc.subject.none.fl_str_mv Aluminium oxide
Aluminium nitride
DC magnetron
Reactive sputtering
Morphology
Structure
Electrical resistivity
dc.title.fl_str_mv AlNxOy thin films deposited by DC reactive magnetron sputtering
dc.type.none.fl_str_mv http://purl.org/coar/resource_type/c_6501
description AlNxOy thin films were produced by DC reactive magnetron sputtering, using an atmosphere of argon and a reactive gas mixture of nitrogen and oxygen, for a wide range of partial pressures of reactive gas. During the deposition, the discharge current was kept constant and the discharge parameters were monitored. The deposition rate, chemical composition, morphology, structure and electrical resistivity of the coatings are strongly correlated with discharge parameters. Varying the reactive gas mixture partial pressure, the film properties change gradually from metallic-like films, for low reactive gas partial pressures, to stoichiometric amorphous Al2O3 insulator films, at high pressures. For intermediate reactive gas pressures, sub-stoichiometric AlN x O y films were obtained, with the electrical resistivity of the films increasing with the non metallic/metallic ratio.
dirty 0
eu_rights_str_mv openAccess
format article
fulltext.url.fl_str_mv https://repositorium.uminho.pt/bitstreams/5618d3f9-99b4-42d6-916d-429e3058312c/download
id rum_f92d3ca0f2a6f44bc331f88924adf80a
identifier.url.fl_str_mv https://hdl.handle.net/1822/10981
instacron_str repositorium
institution Universidade do Minho
instname_str Universidade do Minho
language eng
network_acronym_str rum
network_name_str RepositóriUM - Universidade do Minho
oai_identifier_str oai:repositorium.uminho.pt:1822/10981
organization_str_mv urn:organizationAcronym:repositorium
person_str_mv Borges, Joel Nuno Pinto
Vaz, F.
Marques, L.
publishDate 2010
publisher.none.fl_str_mv Elsevier
reponame_str RepositóriUM - Universidade do Minho
repository_id_str urn:repositoryAcronym:rum
service_str_mv urn:repositoryAcronym:rum
spelling engElsevierporAlNxOy thin films were produced by DC reactive magnetron sputtering, using an atmosphere of argon and a reactive gas mixture of nitrogen and oxygen, for a wide range of partial pressures of reactive gas. During the deposition, the discharge current was kept constant and the discharge parameters were monitored. The deposition rate, chemical composition, morphology, structure and electrical resistivity of the coatings are strongly correlated with discharge parameters. Varying the reactive gas mixture partial pressure, the film properties change gradually from metallic-like films, for low reactive gas partial pressures, to stoichiometric amorphous Al2O3 insulator films, at high pressures. For intermediate reactive gas pressures, sub-stoichiometric AlN x O y films were obtained, with the electrical resistivity of the films increasing with the non metallic/metallic ratio.application/pdfporAlNxOy thin films deposited by DC reactive magnetron sputteringBorges, Joel Nuno PintoVaz, F.Marques, L.HostingInstitutionOrganizationalRepositóriUM - Universidade do Minhoe-mailmailto:repositorium@usdb.uminho.ptrepositorium@usdb.uminho.ptCITATION"Applied Surface Science". ISSN 0169-4332. 257:5 (2010) 1478-1483.ISSNIsPartOf0169-4332DOIIsPartOf10.1016/j.apsusc.2010.08.0762010-10-29T13:43:26Z20102010-01-01T00:00:00ZHandlehttps://hdl.handle.net/1822/10981http://purl.org/coar/access_right/c_abf2open accessAluminium oxideAluminium nitrideDC magnetronReactive sputteringMorphologyStructureElectrical resistivity946263 bytesliteraturehttp://purl.org/coar/resource_type/c_6501journal articlehttp://purl.org/coar/access_right/c_abf2application/pdffulltexthttps://repositorium.uminho.pt/bitstreams/5618d3f9-99b4-42d6-916d-429e3058312c/download
spellingShingle AlNxOy thin films deposited by DC reactive magnetron sputtering
Borges, Joel Nuno Pinto
Aluminium oxide
Aluminium nitride
DC magnetron
Reactive sputtering
Morphology
Structure
Electrical resistivity
status SINGLETON
subject.fl_str_mv Aluminium oxide
Aluminium nitride
DC magnetron
Reactive sputtering
Morphology
Structure
Electrical resistivity
title AlNxOy thin films deposited by DC reactive magnetron sputtering
title_full AlNxOy thin films deposited by DC reactive magnetron sputtering
title_fullStr AlNxOy thin films deposited by DC reactive magnetron sputtering
title_full_unstemmed AlNxOy thin films deposited by DC reactive magnetron sputtering
title_short AlNxOy thin films deposited by DC reactive magnetron sputtering
title_sort AlNxOy thin films deposited by DC reactive magnetron sputtering
topic Aluminium oxide
Aluminium nitride
DC magnetron
Reactive sputtering
Morphology
Structure
Electrical resistivity
topic_facet Aluminium oxide
Aluminium nitride
DC magnetron
Reactive sputtering
Morphology
Structure
Electrical resistivity
url https://hdl.handle.net/1822/10981
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