Document details

Interface matters: Design of an efficient α-Ag2WO4/Ag3PO4 photocatalyst

Author(s): Trench, Aline B. ; Alvarez, Roman ; Teodoro, Vinícius ; da Trindade, Letícia G. [UNESP] ; Machado, Thales R. ; Teixeira, Mayara M. ; de Souza, Daniele ; Pinatti, Ivo M. [UNESP] ; Simões, Alexandre Z. [UNESP] ; Gobato, Yara Galvão ; Andrés, Juan ; Longo, Elson

Date: 2022

Persistent ID: http://hdl.handle.net/11449/234136

Origin: Oasisbr

Subject(s): Photocatalytic activity; Surface plasmon resonance; Type I heterojunction; α-Ag2WO4/Ag3PO4


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Made available in DSpace on 2022-05-01T13:41:35Z (GMT). No. of bitstreams: 0 Previous issue date: 2022-03-15

Coordenação de Aperfeiçoamento de Pessoal de Nível Superior (CAPES)

Conselho Nacional de Desenvolvimento Científico e Tecnológico (CNPq)

Fundação de Amparo à Pesquisa do Estado de São Paulo (FAPESP)

Ministerio de Ciencia, Innovación y Universidades

Universitat Jaume I

Heterojunction engineering of complex metal oxides is an active area of research that addresses fundamental questions in solid-state systems with broad technological applications. In this work, α-Ag2WO4/Ag3PO4 heterojunctions with different amounts of α-Ag2WO4 (12, 24, and 36 wt%) were synthesized by the coprecipitation method and characterized by X-ray diffraction, X-ray photoelectron spectroscopy, field emission scanning electron microscopy, transmission electron microscopy, UV–vis diffuse reflectance spectroscopy, and photoluminescence. The α-Ag2WO4/Ag3PO4 heterojunction containing 24% wt of α-Ag2WO4 showed the most enhanced photocatalytic activity for the degradation of Rhodamine B, being much higher than Ag3PO4 and α-Ag2WO4. Trapping experiments revealed that the holes and superoxide radical, in minor extent, were the main active species in the photocatalytic degradation. Such enhanced photocatalytic performance was explained by the surface plasmon resonance effect associated with the presence of metallic Ag at the interface and the formation of a type I heterojunction between α-Ag2WO4 and Ag3PO4 semiconductors.

CDMF − Department of Chemistry Federal University of São Carlos

Department of Chemistry Sao Paulo State University

Department of Physics – Federal University of São Carlos

Faculty of Engineering of Guaratinguetá São Paulo State University UNESP, Guaratinguetá

Department of Analytical and Physical Chemistry University Jaume I

Department of Chemistry Sao Paulo State University

Faculty of Engineering of Guaratinguetá São Paulo State University UNESP, Guaratinguetá

CAPES: 001

CNPq: 142035/2017-3

FAPESP: 19/23488-5

FAPESP: 2013/07296-2

FAPESP: 2019/03722-3

FAPESP: 2019/23488-5

FAPESP: 2019/25944-8

Ministerio de Ciencia, Innovación y Universidades: PGC2018094417-B-I00

Universitat Jaume I: UJI-B2019-30

Document Type Journal article
Language English
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