Autor(es): Alberto, H. V. ; Vilão, R. C. ; Ribeiro, E. F. M. ; Gil, J. M. ; Curado, M. A. ; Teixeira, J. P. ; Fernandes, P. A. ; Cunha, J. M. V. ; Salomé, P. M. P. ; Edoff, M. ; Martins, M. I. ; Prokscha, T. ; Salman, Z. ; Weidinger, A.
Data: 2023
Identificador Persistente: https://hdl.handle.net/10316/114675
Origem: Estudo Geral - Universidade de Coimbra
The slow muon technique was used to study the p-n junction of chalcopyrite solar cells. A defect layer near the interface was identi ed and the passivation of the defects by bu er layers was studied. Several cover layers on top of the chalcopyrite Cu(In,Ga)Se2 (CIGS) semiconductor absorber were investigated in this work, namely CdS, ZnSnO, Al2O3 and SiO2. Quantitative results were obtained: The defect layer extends about 50 nm into the CIGS absorber, the relevant disturbance is strain in the lattice, and CdS provides the best passivation, oxides have a minor e ect. In the present contribution, speci c aspects of the low-energy muon technique in connection with this research are discussed.
This work was supported with funds from FEDER (Programa Operacional Factores de Competitividade COMPETE) and by national funds from FCT - Fundação para a Ciência e Tecnologia, I. P. (Portugal) under projects PTDC/FIS-MAC/29696/2017, PD/BD/142780/2018, UID/04564/2020, UID/04730/2020, UID/50025/2020.
