Surface states influence in Al Schottky barrier of Ge nanowires

• Autor(es): Kamimura, Hanay ; Simon, Ricardo A. ; Berengue, Olivia M. [UNESP] ; Amorim, Cleber A. ; Chiquito, Adenilson J. ; Leite, Edson R.
• Data: 2022
• Identificador Persistente: http://hdl.handle.net/11449/220143
• Origem: Oasisbr
• Tipo de Documento: Outro
• Idioma: Inglês

Descrição

Made available in DSpace on 2022-04-28T18:59:51Z (GMT). No. of bitstreams: 0 Previous issue date: 2013-01-01

Aiming the understanding of how the application to devices is affected by the presence of oxygen in semiconductor nanostructures, Al/Ge-nanowires Schottky devices were fabricated without any previous treatment to remove the native oxide from nanowires' surface, originated during the growth process. Electronic transport properties of these devices were investigated and it was observed that interface states originated from the disordered oxide layer effectively pinned the Fermi level at the Ge surface, affecting Schottky barriers. Numerical calculations were made to complement this study agreeing with experiments. © 2013 Materials Research Society.

Departamento de Física, Universidade Federal de São Carlos, CP 676, CEP 13565-905, São Carlos, São Paulo

Universidade Tecnológica Federal do Paraná, Campus Apucarana

Universidade Estadual Paulista, Unesp

Laboratório Interdisciplinar de Eletroquímica e Cerâmicas, Departamento de Química, Universidade Federal de São Carlos, CP 676, CEP 135665-905, São Carlos, São Paulo

Universidade Estadual Paulista, Unesp