Autor(es): Mota, Filipa C. ; Garcia, Inês S. ; Retolaza, Aritz ; Santos, Dimitri E. ; Sousa, Patrícia C. ; Aguiam, Diogo E. ; Dias, Rosana A. ; Calaza, Carlos ; Ferreira da Silva, Alexandre ; Alves, Filipe S. Alves
Data: 2024
Identificador Persistente: https://hdl.handle.net/1822/94111
Origem: RepositóriUM - Universidade do Minho
Assunto(s): Metal-induced crystallization; Polysilicon; Low-temperature; Gauge factor; Temperature coefficient of resistance; Polyimide
The development of low-temperature piezoresistive materials provides compatibility with standard silicon-based MEMS fabrication processes. Additionally, it enables the use of such material in flexible substrates, thereby expanding the potential for various device applications. This work demonstrates, for the first time, the fabrication of a 200 nm polycrystalline silicon thin film through a metal-induced crystallization process mediated by an AlSiCu alloy at temperatures as low as 450 °C on top of silicon and polyimide (PI) substrates. The resulting polycrystalline film structure exhibits crystallites with a size of approximately 58 nm, forming polysilicon (poly-Si) grains with diameters between 1–3 µm for Si substrates and 3–7 µm for flexible PI substrates. The mechanical and electrical properties of the poly-Si were experimentally conducted using microfabricated test structures containing piezoresistors formed by poly-Si with different dimensions. The poly-Si material reveals a longitudinal gauge factor (GF) of 12.31 and a transversal GF of −4.90, evaluated using a four-point bending setup. Additionally, the material has a linear temperature coefficient of resistance (TCR) of −2471 ppm/°C. These results illustrate the potential of using this low-temperature film for pressure, force, or temperature sensors. The developed film also demonstrated sensitivity to light, indicating that the developed material can also be explored in photo-sensitive applications.
