Autor(es):
Fernandes, João Luís Carneiro ; Ferreira, Gabriel Malheiro ; Carmo, João Paulo ; Minas, Graça ; Catarino, Susana Oliveira
Data: 2026
Identificador Persistente: https://hdl.handle.net/1822/101521
Origem: RepositóriUM - Universidade do Minho
Projeto/bolsa:
info:eu-repo/grantAgreement/FCT/Concurso de Projetos de IC&DT em Todos os Domínios Científicos 2023/2023.16645.ICDT/PT;
info:eu-repo/grantAgreement/FCT/Avaliação UID 2023/2024/UID/04436/2025/PT;
info:eu-repo/grantAgreement/FCT/Concurso para Atribuição do Estatuto e Financiamento de Laboratórios Associados (LA)/LA/P/0029/2020/PT;
info:eu-repo/grantAgreement/FCT//2022.10519.BD/PT;
Assunto(s): Engenharia e Tecnologia::Engenharia Eletrotécnica, Eletrónica e Informática; Indústria, inovação e infraestruturas
Descrição
Optimizing the spectral response of p-n junction silicon photodiodes fabricated in CMOS technologies requires precise knowledge of the optical behaviour of the multilayer dielectric stack, inherent to the CMOS fabrication process, deposited on top of the silicon substrate. It features reflection and interference phenomena defining the fraction of light reaching the photodiodes’ active area. As these layers cannot be modified by the designer, accurate modelling of their optical impact is essential for reliable performance prediction within process constraints. This work presents a comparative study of numerical approaches for simulating the optical transmission through planar multilayer dielectric stacks on silicon, representative of two standard CMOS technologies: TSMC 65 nm and TSMC 180 nm. [cont.]
