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Bandlike transport in fapbbr3 quantum dot phototransistor with high hole mobility and ultrahigh photodetectivity

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Resumo:Halide perovskites have been widely explored for numerous optoelectronic applications among which phototransistors have appeared as one of the most promising light signal detectors. However, it is still a great challenge to endow halide perovskites with both mobility and high photosensitivity because of their high sensitivity to moisture in ambient atmosphere. Here, we explore an FAPbBr3 perovskite quantum dot (QD) phototransistor with bandlike charge transport and measure a dark hole mobility of 14.2 cm2 V-1 s-1 at ambient atmosphere. Attaining both high mobility and good optical figures of merit, a detectivity of ∼1016 Jones is achieved, which is a record for halide perovskite nanocrystals. Simple A-site salt (FABr) treatments offer a mechanism for connecting between perovskite QDs for better charge transfer in high-quality devices. All of these important properties are superior to most advanced inorganic semiconductor phototransistors, indicating a promising future in optoelectronic applications.
Autores principais:Ferreira, Rodrigo
Outros Autores:Shaikh, Monirul; Jakka, Suresh Kumar; Deuermeier, Jonas; Barquinha, Pedro; Ghosh, Saurabh; Fortunato, Elvira; Martins, Rodrigo; Jana, Santanu
Assunto:Halide perovskite Quantum dots Photodetector Thin film transistor Mobility Bandlike transport
Ano:2022
País:Portugal
Tipo de documento:artigo
Tipo de acesso:acesso restrito
Instituição associada:Universidade de Aveiro
Idioma:inglês
Origem:RIA - Repositório Institucional da Universidade de Aveiro

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