Publicação
Study of Annealed Indium Tin Oxide-Films prepared by RF Reactive Magnetron Sputtering
| Resumo: | Tin doped indium oxide (ITO) films were deposited on glass substrates by rf reactive magnetron sputtering using a metallic alloy target (In-Sn, 90-10). The post-deposition annealing has been done for ITO films in air and the effect of annealing temperature on the electrical, optical and structural properties of ITO films was studied. It has been found that the increase of the annealing temperature will improve the film electrical properties. The resistivity of as deposited film is about 1.3 x 10(-1) Omega*cm and decreases down to 6.9 x 10(-3) Omega*cm as the annealing temperature is increased up to 500 degrees C. In addition, the annealing will also increase the film surface roughness which can improve the efficiency of amorphous silicon solar cells by increasing the amount of light trapping. |
|---|---|
| Autores principais: | Meng, L. J. |
| Outros Autores: | Maçarico, António Filipe Ruas da Trindade; Martins, R. |
| Assunto: | Optical-Properties Thin-Films Electrical-Properties Deposition Substrate |
| Ano: | 1995 |
| País: | Portugal |
| Tipo de documento: | artigo |
| Tipo de acesso: | acesso restrito |
| Instituição associada: | Instituto Politécnico de Lisboa |
| Idioma: | inglês |
| Origem: | Repositório Científico do Instituto Politécnico de Lisboa |
| _version_ | 1868417549236961280 |
|---|---|
| author | Meng, L. J. |
| author2 | Maçarico, António Filipe Ruas da Trindade Martins, R. |
| author2_role | author author |
| author_facet | Meng, L. J. Maçarico, António Filipe Ruas da Trindade Martins, R. |
| author_role | author |
| contributor_name_str_mv | RCIPL |
| country_str | PT |
| creators_json_txt | [{\"Person.name\":\"Meng, L. J.\"},{\"Person.name\":\"Maçarico, António Filipe Ruas da Trindade\"},{\"Person.name\":\"Martins, R.\"}] |
| datacite.contributors.contributor.contributorName.fl_str_mv | RCIPL |
| datacite.creators.creator.creatorName.fl_str_mv | Meng, L. J. Maçarico, António Filipe Ruas da Trindade Martins, R. |
| datacite.date.Accepted.fl_str_mv | 1995-07-01T00:00:00Z |
| datacite.date.available.fl_str_mv | 2014-06-02T14:51:54Z |
| datacite.date.embargoed.fl_str_mv | 2014-06-02T14:51:54Z |
| datacite.rights.fl_str_mv | http://purl.org/coar/access_right/c_16ec |
| datacite.subjects.subject.fl_str_mv | Optical-Properties Thin-Films Electrical-Properties Deposition Substrate |
| datacite.titles.title.fl_str_mv | Study of Annealed Indium Tin Oxide-Films prepared by RF Reactive Magnetron Sputtering |
| dc.contributor.none.fl_str_mv | RCIPL |
| dc.creator.none.fl_str_mv | Meng, L. J. Maçarico, António Filipe Ruas da Trindade Martins, R. |
| dc.date.Accepted.fl_str_mv | 1995-07-01T00:00:00Z |
| dc.date.available.fl_str_mv | 2014-06-02T14:51:54Z |
| dc.date.embargoed.fl_str_mv | 2014-06-02T14:51:54Z |
| dc.format.none.fl_str_mv | application/pdf |
| dc.identifier.none.fl_str_mv | http://hdl.handle.net/10400.21/3603 |
| dc.language.none.fl_str_mv | eng |
| dc.publisher.none.fl_str_mv | Pergamon-Elsevier Science LTD |
| dc.rights.none.fl_str_mv | http://purl.org/coar/access_right/c_16ec |
| dc.subject.none.fl_str_mv | Optical-Properties Thin-Films Electrical-Properties Deposition Substrate |
| dc.title.fl_str_mv | Study of Annealed Indium Tin Oxide-Films prepared by RF Reactive Magnetron Sputtering |
| dc.type.none.fl_str_mv | http://purl.org/coar/resource_type/c_6501 |
| description | Tin doped indium oxide (ITO) films were deposited on glass substrates by rf reactive magnetron sputtering using a metallic alloy target (In-Sn, 90-10). The post-deposition annealing has been done for ITO films in air and the effect of annealing temperature on the electrical, optical and structural properties of ITO films was studied. It has been found that the increase of the annealing temperature will improve the film electrical properties. The resistivity of as deposited film is about 1.3 x 10(-1) Omega*cm and decreases down to 6.9 x 10(-3) Omega*cm as the annealing temperature is increased up to 500 degrees C. In addition, the annealing will also increase the film surface roughness which can improve the efficiency of amorphous silicon solar cells by increasing the amount of light trapping. |
| dirty | 0 |
| eu_rights_str_mv | restrictedAccess |
| format | article |
| fulltext.url.fl_str_mv | https://repositorio.ipl.pt/bitstreams/3d17d57c-d17e-4d4f-a43b-fb882fe5acd4/download |
| id | ripl_3e88e508e6fe6cc2d9dd4e2bc78b74c0 |
| identifier.url.fl_str_mv | http://hdl.handle.net/10400.21/3603 |
| instacron_str | ipl |
| institution | Instituto Politécnico de Lisboa |
| instname_str | Instituto Politécnico de Lisboa |
| language | eng |
| network_acronym_str | ripl |
| network_name_str | Repositório Científico do Instituto Politécnico de Lisboa |
| oai_identifier_str | oai:repositorio.ipl.pt:10400.21/3603 |
| organization_str_mv | urn:organizationAcronym:ipl |
| person_str_mv | Meng, L. J. Maçarico, António Filipe Ruas da Trindade Martins, R. |
| publishDate | 1995 |
| publisher.none.fl_str_mv | Pergamon-Elsevier Science LTD |
| reponame_str | Repositório Científico do Instituto Politécnico de Lisboa |
| repository_id_str | urn:repositoryAcronym:ripl |
| service_str_mv | urn:repositoryAcronym:ripl |
| spelling | engPergamon-Elsevier Science LTDporTin doped indium oxide (ITO) films were deposited on glass substrates by rf reactive magnetron sputtering using a metallic alloy target (In-Sn, 90-10). The post-deposition annealing has been done for ITO films in air and the effect of annealing temperature on the electrical, optical and structural properties of ITO films was studied. It has been found that the increase of the annealing temperature will improve the film electrical properties. The resistivity of as deposited film is about 1.3 x 10(-1) Omega*cm and decreases down to 6.9 x 10(-3) Omega*cm as the annealing temperature is increased up to 500 degrees C. In addition, the annealing will also increase the film surface roughness which can improve the efficiency of amorphous silicon solar cells by increasing the amount of light trapping.application/pdfporStudy of Annealed Indium Tin Oxide-Films prepared by RF Reactive Magnetron SputteringMeng, L. J.Maçarico, António Filipe Ruas da TrindadeMartins, R.HostingInstitutionOrganizationalRCIPLe-mailmailto:rcaap@sp.ipl.ptrcaap@sp.ipl.ptISSNIsPartOf0042-207XURNIsPartOf10.1016/0042-207X(94)00150-22014-06-02T14:51:54Z1995-071995-07-01T00:00:00ZHandlehttp://hdl.handle.net/10400.21/3603http://purl.org/coar/access_right/c_16ecrestricted accessOptical-PropertiesThin-FilmsElectrical-PropertiesDepositionSubstrate832250 bytesliteraturehttp://purl.org/coar/resource_type/c_6501journal articlehttp://purl.org/coar/access_right/c_16ecapplication/pdffulltexthttps://repositorio.ipl.pt/bitstreams/3d17d57c-d17e-4d4f-a43b-fb882fe5acd4/downloadVaccum467673680Oxford |
| spellingShingle | Study of Annealed Indium Tin Oxide-Films prepared by RF Reactive Magnetron Sputtering Meng, L. J. Optical-Properties Thin-Films Electrical-Properties Deposition Substrate |
| status | SINGLETON |
| subject.fl_str_mv | Optical-Properties Thin-Films Electrical-Properties Deposition Substrate |
| title | Study of Annealed Indium Tin Oxide-Films prepared by RF Reactive Magnetron Sputtering |
| title_full | Study of Annealed Indium Tin Oxide-Films prepared by RF Reactive Magnetron Sputtering |
| title_fullStr | Study of Annealed Indium Tin Oxide-Films prepared by RF Reactive Magnetron Sputtering |
| title_full_unstemmed | Study of Annealed Indium Tin Oxide-Films prepared by RF Reactive Magnetron Sputtering |
| title_short | Study of Annealed Indium Tin Oxide-Films prepared by RF Reactive Magnetron Sputtering |
| title_sort | Study of Annealed Indium Tin Oxide-Films prepared by RF Reactive Magnetron Sputtering |
| topic | Optical-Properties Thin-Films Electrical-Properties Deposition Substrate |
| topic_facet | Optical-Properties Thin-Films Electrical-Properties Deposition Substrate |
| url | http://hdl.handle.net/10400.21/3603 |
| visible | 1 |