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Properties of MeNxOy thin films prepared by reactive DC magnetron sputtering

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Resumo:The addition of small amount of nitrogen to a growing MeOy (Me = Metal) film originates a new class of materials with a wide range of different properties, where the optical, electrical and mechanical ones may be tailored between those of the pure oxide, MeOy, and oxynitride, MeNxOy, films, according to the particular application envisaged. The main reason for this is related with the change in the nitride content (which can be either metallic or even insulating-type) of the films promoted by the increasing amounts of nitrogen that are introduced in the films. In this work thin films of MeNxOy were produced using reactive DC magnetron sputtering, using a metallic (Me) target and an Ar/(N2,O2) gas mixture. Preliminary results revealed that the incorporation of nitrogen in the MeOy matrix induces the production of films with electrical and optical responses rather different than the pure oxide that are strongly correlated with its structural arrangement, chemical composition an d morphology changes. On one hand the electrical resistivity and temperature coefficient of resistance were found to have a wide variation, which can be explained using a tunnel barrier conduction mechanism for the electric charge transport through the film, with possible applications in microelectronic devices. The particular morphology of the films induced a broadband optical response with high optical absorption from 290 to 2500 nm, with potential applications in solar cells and thermal photovoltaics.
Autores principais:Borges, Joel Nuno Pinto
Outros Autores:Vaz, F.; Marques, L.
Ano:2012
País:Portugal
Tipo de documento:póster em conferência
Tipo de acesso:acesso aberto
Instituição associada:Universidade do Minho
Idioma:inglês
Origem:RepositóriUM - Universidade do Minho
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author Borges, Joel Nuno Pinto
author2 Vaz, F.
Marques, L.
author2_role author
author
author_facet Borges, Joel Nuno Pinto
Vaz, F.
Marques, L.
author_role author
contributor_name_str_mv RepositóriUM - Universidade do Minho
country_str PT
creators_json_txt [{\"Person.name\":\"Borges, Joel Nuno Pinto\"},{\"Person.name\":\"Vaz, F.\"},{\"Person.name\":\"Marques, L.\"}]
datacite.contributors.contributor.contributorName.fl_str_mv RepositóriUM - Universidade do Minho
datacite.creators.creator.creatorName.fl_str_mv Borges, Joel Nuno Pinto
Vaz, F.
Marques, L.
datacite.date.Accepted.fl_str_mv 2012-05-01T00:00:00Z
datacite.date.available.fl_str_mv 2012-11-07T15:26:27Z
datacite.date.embargoed.fl_str_mv 2012-11-07T15:26:27Z
datacite.rights.fl_str_mv http://purl.org/coar/access_right/c_abf2
datacite.titles.title.fl_str_mv Properties of MeNxOy thin films prepared by reactive DC magnetron sputtering
dc.contributor.none.fl_str_mv RepositóriUM - Universidade do Minho
dc.creator.none.fl_str_mv Borges, Joel Nuno Pinto
Vaz, F.
Marques, L.
dc.date.Accepted.fl_str_mv 2012-05-01T00:00:00Z
dc.date.available.fl_str_mv 2012-11-07T15:26:27Z
dc.date.embargoed.fl_str_mv 2012-11-07T15:26:27Z
dc.format.none.fl_str_mv application/pdf
dc.identifier.none.fl_str_mv https://hdl.handle.net/1822/20723
dc.language.none.fl_str_mv eng
dc.publisher.none.fl_str_mv European Materials Research Society
dc.rights.none.fl_str_mv http://purl.org/coar/access_right/c_abf2
dc.title.fl_str_mv Properties of MeNxOy thin films prepared by reactive DC magnetron sputtering
dc.type.none.fl_str_mv http://purl.org/coar/resource_type/c_6670
description The addition of small amount of nitrogen to a growing MeOy (Me = Metal) film originates a new class of materials with a wide range of different properties, where the optical, electrical and mechanical ones may be tailored between those of the pure oxide, MeOy, and oxynitride, MeNxOy, films, according to the particular application envisaged. The main reason for this is related with the change in the nitride content (which can be either metallic or even insulating-type) of the films promoted by the increasing amounts of nitrogen that are introduced in the films. In this work thin films of MeNxOy were produced using reactive DC magnetron sputtering, using a metallic (Me) target and an Ar/(N2,O2) gas mixture. Preliminary results revealed that the incorporation of nitrogen in the MeOy matrix induces the production of films with electrical and optical responses rather different than the pure oxide that are strongly correlated with its structural arrangement, chemical composition an d morphology changes. On one hand the electrical resistivity and temperature coefficient of resistance were found to have a wide variation, which can be explained using a tunnel barrier conduction mechanism for the electric charge transport through the film, with possible applications in microelectronic devices. The particular morphology of the films induced a broadband optical response with high optical absorption from 290 to 2500 nm, with potential applications in solar cells and thermal photovoltaics.
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person_str_mv Borges, Joel Nuno Pinto
Vaz, F.
Marques, L.
publishDate 2012
publisher.none.fl_str_mv European Materials Research Society
reponame_str RepositóriUM - Universidade do Minho
repository_id_str urn:repositoryAcronym:rum
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spelling engEuropean Materials Research SocietyporThe addition of small amount of nitrogen to a growing MeOy (Me = Metal) film originates a new class of materials with a wide range of different properties, where the optical, electrical and mechanical ones may be tailored between those of the pure oxide, MeOy, and oxynitride, MeNxOy, films, according to the particular application envisaged. The main reason for this is related with the change in the nitride content (which can be either metallic or even insulating-type) of the films promoted by the increasing amounts of nitrogen that are introduced in the films. In this work thin films of MeNxOy were produced using reactive DC magnetron sputtering, using a metallic (Me) target and an Ar/(N2,O2) gas mixture. Preliminary results revealed that the incorporation of nitrogen in the MeOy matrix induces the production of films with electrical and optical responses rather different than the pure oxide that are strongly correlated with its structural arrangement, chemical composition an d morphology changes. On one hand the electrical resistivity and temperature coefficient of resistance were found to have a wide variation, which can be explained using a tunnel barrier conduction mechanism for the electric charge transport through the film, with possible applications in microelectronic devices. The particular morphology of the films induced a broadband optical response with high optical absorption from 290 to 2500 nm, with potential applications in solar cells and thermal photovoltaics.application/pdfporProperties of MeNxOy thin films prepared by reactive DC magnetron sputteringBorges, Joel Nuno PintoVaz, F.Marques, L.HostingInstitutionOrganizationalRepositóriUM - Universidade do Minhoe-mailmailto:repositorium@usdb.uminho.ptrepositorium@usdb.uminho.pt2012-11-07T15:26:27Z2012-052012-05-01T00:00:00ZHandlehttps://hdl.handle.net/1822/20723http://purl.org/coar/access_right/c_abf2open access4408112 bytesother research producthttp://purl.org/coar/resource_type/c_6670conference posterhttp://purl.org/coar/access_right/c_abf2application/pdffulltexthttps://repositorium.uminho.pt/bitstreams/dbe2bcb7-f6f0-46c7-9bf8-991f95dc4704/download
spellingShingle Properties of MeNxOy thin films prepared by reactive DC magnetron sputtering
Borges, Joel Nuno Pinto
status SINGLETON
title Properties of MeNxOy thin films prepared by reactive DC magnetron sputtering
title_full Properties of MeNxOy thin films prepared by reactive DC magnetron sputtering
title_fullStr Properties of MeNxOy thin films prepared by reactive DC magnetron sputtering
title_full_unstemmed Properties of MeNxOy thin films prepared by reactive DC magnetron sputtering
title_short Properties of MeNxOy thin films prepared by reactive DC magnetron sputtering
title_sort Properties of MeNxOy thin films prepared by reactive DC magnetron sputtering
url https://hdl.handle.net/1822/20723
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