Detalhes bibliográficos
| Resumo: | In this work, resistive switching in pulsed laser deposited ferroelectric lead-free 0.5Ba(Zr0.2Ti0.8)O3–0.5(Ba0.7Ca0.3)TiO3 (0.5BZT–0.5BCT) thin films was investigated. This study reveals that films grown at 5.5 J cm−2 have shown optimal ferroelectric and resistive switching response, which are attributed to high tetragonality, large grain size and less defect concentration. Au/0.5BZT–0.5BCT/Pt capacitors show the electroforming free resistive switching that is explained based on the polarization modulation of the Schottky-like barrier at the 0.5BZT–0.5BCT/Au interface. The polarization induced resistive switching is evidenced by its disappearance as the temperature increases to the Curie temperature. The capacitor based on film grown at 5.5 J cm−2 shows resistive switching characterized by high switching ratio of 106 at a low set/reset voltage ≈1V, and by a stable memory window, which are highly required for memory applications. |
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| Autores principais: | Silva, J. P. B. |
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| Outros Autores: | Kamakshi, Koppole; Sekhar, K. C.; Queirós, E. C.; Moreira, J. Agostinho; Almeida, A.; Pereira, Mário; Tavares, P. B.; Gomes, M. J. M. |
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| Assunto: | Resistive switching Ferroelectricity Pulsed laser deposition (0.5BZT–0.5BCT) thin film |
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| Ano: | 2016 |
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| País: | Portugal |
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| Tipo de documento: | artigo |
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| Tipo de acesso: | acesso restrito |
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| Instituição associada: | Universidade do Minho |
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| Idioma: | inglês |
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| Origem: | RepositóriUM - Universidade do Minho |
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