Publicação
Optimization of deposition parameters for thin silicon films on flexible substrates in a hot-wire chemical vapor deposition reactor
| Resumo: | This paper studies the deposition of thin silicon films from silane on plastic substrates in a recently build hot-wire chemical vapor deposition reactor. Hydrogen dilution of silane was used to induce amorphous-to-nanocrystalline phase transition. Thin-film deposition rate, r(d), is roughly proportional to silane concentration during deposition but the proportionality factor depends on filament temperature, T-fil. At T-fil similar to 2500 degrees C (1900 degrees C), r(d) increases from 2.1 angstrom/s (1.2 angstrom/s) at 97% H-2 dilution to 14.5 angstrom/s (10.7 angstrom/s) for films deposited from pure silane. At T-fil similar to 2500 degrees C, films deposited under 80% H-2 dilution were amorphous, under 90% H-2 dilution the crystalline fraction was X-C = 49.4% and under 95% H-2 dilution, X-C = 52.8%. At T-fil similar to 1900 degrees C, samples were amorphous up to similar to 95% H-2 dilution where a crystalline fraction of 22.3% was measured. Films with amorphous structure have sigma(d) similar to 10(-10)-10(-9) Omega(-1.)cm(-1) while those with a measured crystalline fraction have sigma(d)similar to 10(-7)-10(-5) Omega(-1)cm(-1), depending on the amount of crystalline fraction and grain size. Films with lower sigma(d) have optical band gap in the range similar to 1.85-1.9 eV, typical of hydrogenated amorphous silicon, while those with higher sigma(d) have larger optical band gap (similar to 2 eV), typical of hydrogenated nanocrystalline silicon. Adhesion of the films to the plastic substrate was good, as they survived bending to small radius of curvature (< 1 mm) without peeling. Structural, optical and transport properties were similar on films deposited both on PEN and on glass under the same deposition conditions. |
|---|---|
| Autores principais: | Alpuim, P. |
| Outros Autores: | Ribeiro, M.; Filonovich, Sergej |
| Assunto: | Nanocrystalline silicon Hot-wire CVD Flexible electronics Thin-film solar cell |
| Ano: | 2006 |
| País: | Portugal |
| Tipo de documento: | comunicação em conferência |
| Tipo de acesso: | acesso aberto |
| Instituição associada: | Universidade do Minho |
| Idioma: | inglês |
| Origem: | RepositóriUM - Universidade do Minho |
| _version_ | 1866271124411645952 |
|---|---|
| author | Alpuim, P. |
| author2 | Ribeiro, M. Filonovich, Sergej |
| author2_role | author author |
| author_facet | Alpuim, P. Ribeiro, M. Filonovich, Sergej |
| author_role | author |
| contributor_name_str_mv | Universidade do Minho |
| country_str | PT |
| creators_json_txt | [{\"Person.name\":\"Alpuim, P.\"},{\"Person.name\":\"Ribeiro, M.\"},{\"Person.name\":\"Filonovich, Sergej\"}] |
| datacite.contributors.contributor.contributorName.fl_str_mv | Universidade do Minho |
| datacite.creators.creator.creatorName.fl_str_mv | Alpuim, P. Ribeiro, M. Filonovich, Sergej |
| datacite.date.Accepted.fl_str_mv | 2006-01-01T00:00:00Z |
| datacite.date.available.fl_str_mv | 2006-09-15T09:52:25Z |
| datacite.date.embargoed.fl_str_mv | 2006-09-15T09:52:25Z |
| datacite.rights.fl_str_mv | http://purl.org/coar/access_right/c_abf2 |
| datacite.subjects.subject.fl_str_mv | Nanocrystalline silicon Hot-wire CVD Flexible electronics Thin-film solar cell |
| datacite.titles.title.fl_str_mv | Optimization of deposition parameters for thin silicon films on flexible substrates in a hot-wire chemical vapor deposition reactor |
| dc.contributor.none.fl_str_mv | Universidade do Minho |
| dc.creator.none.fl_str_mv | Alpuim, P. Ribeiro, M. Filonovich, Sergej |
| dc.date.Accepted.fl_str_mv | 2006-01-01T00:00:00Z |
| dc.date.available.fl_str_mv | 2006-09-15T09:52:25Z |
| dc.date.embargoed.fl_str_mv | 2006-09-15T09:52:25Z |
| dc.format.none.fl_str_mv | application/pdf |
| dc.identifier.none.fl_str_mv | https://hdl.handle.net/1822/5554 |
| dc.language.none.fl_str_mv | eng |
| dc.publisher.none.fl_str_mv | Trans Tech Publications |
| dc.rights.none.fl_str_mv | http://purl.org/coar/access_right/c_abf2 |
| dc.subject.none.fl_str_mv | Nanocrystalline silicon Hot-wire CVD Flexible electronics Thin-film solar cell |
| dc.title.fl_str_mv | Optimization of deposition parameters for thin silicon films on flexible substrates in a hot-wire chemical vapor deposition reactor |
| dc.type.none.fl_str_mv | http://purl.org/coar/resource_type/c_5794 |
| description | This paper studies the deposition of thin silicon films from silane on plastic substrates in a recently build hot-wire chemical vapor deposition reactor. Hydrogen dilution of silane was used to induce amorphous-to-nanocrystalline phase transition. Thin-film deposition rate, r(d), is roughly proportional to silane concentration during deposition but the proportionality factor depends on filament temperature, T-fil. At T-fil similar to 2500 degrees C (1900 degrees C), r(d) increases from 2.1 angstrom/s (1.2 angstrom/s) at 97% H-2 dilution to 14.5 angstrom/s (10.7 angstrom/s) for films deposited from pure silane. At T-fil similar to 2500 degrees C, films deposited under 80% H-2 dilution were amorphous, under 90% H-2 dilution the crystalline fraction was X-C = 49.4% and under 95% H-2 dilution, X-C = 52.8%. At T-fil similar to 1900 degrees C, samples were amorphous up to similar to 95% H-2 dilution where a crystalline fraction of 22.3% was measured. Films with amorphous structure have sigma(d) similar to 10(-10)-10(-9) Omega(-1.)cm(-1) while those with a measured crystalline fraction have sigma(d)similar to 10(-7)-10(-5) Omega(-1)cm(-1), depending on the amount of crystalline fraction and grain size. Films with lower sigma(d) have optical band gap in the range similar to 1.85-1.9 eV, typical of hydrogenated amorphous silicon, while those with higher sigma(d) have larger optical band gap (similar to 2 eV), typical of hydrogenated nanocrystalline silicon. Adhesion of the films to the plastic substrate was good, as they survived bending to small radius of curvature (< 1 mm) without peeling. Structural, optical and transport properties were similar on films deposited both on PEN and on glass under the same deposition conditions. |
| dirty | 0 |
| eu_rights_str_mv | openAccess |
| format | conferencePaper |
| fulltext.url.fl_str_mv | https://prod-dspace.uminho.pt/bitstreams/9a57f8a1-7f99-44a9-9f24-c413161b93eb/download |
| id | rum_b61d8452fdd41434e33a1ebc8e2ff41b |
| identifier.url.fl_str_mv | https://hdl.handle.net/1822/5554 |
| instacron_str | repositorium |
| institution | Universidade do Minho |
| instname_str | Universidade do Minho |
| language | eng |
| network_acronym_str | rum |
| network_name_str | RepositóriUM - Universidade do Minho |
| oai_identifier_str | oai:repositorium.uminho.pt:1822/5554 |
| organization_str_mv | urn:organizationAcronym:repositorium |
| person_str_mv | Alpuim, P. Ribeiro, M. Filonovich, Sergej |
| publishDate | 2006 |
| publisher.none.fl_str_mv | Trans Tech Publications |
| reponame_str | RepositóriUM - Universidade do Minho |
| repository_id_str | urn:repositoryAcronym:rum |
| service_str_mv | urn:repositoryAcronym:rum |
| spelling | engTrans Tech PublicationsengThis paper studies the deposition of thin silicon films from silane on plastic substrates in a recently build hot-wire chemical vapor deposition reactor. Hydrogen dilution of silane was used to induce amorphous-to-nanocrystalline phase transition. Thin-film deposition rate, r(d), is roughly proportional to silane concentration during deposition but the proportionality factor depends on filament temperature, T-fil. At T-fil similar to 2500 degrees C (1900 degrees C), r(d) increases from 2.1 angstrom/s (1.2 angstrom/s) at 97% H-2 dilution to 14.5 angstrom/s (10.7 angstrom/s) for films deposited from pure silane. At T-fil similar to 2500 degrees C, films deposited under 80% H-2 dilution were amorphous, under 90% H-2 dilution the crystalline fraction was X-C = 49.4% and under 95% H-2 dilution, X-C = 52.8%. At T-fil similar to 1900 degrees C, samples were amorphous up to similar to 95% H-2 dilution where a crystalline fraction of 22.3% was measured. Films with amorphous structure have sigma(d) similar to 10(-10)-10(-9) Omega(-1.)cm(-1) while those with a measured crystalline fraction have sigma(d)similar to 10(-7)-10(-5) Omega(-1)cm(-1), depending on the amount of crystalline fraction and grain size. Films with lower sigma(d) have optical band gap in the range similar to 1.85-1.9 eV, typical of hydrogenated amorphous silicon, while those with higher sigma(d) have larger optical band gap (similar to 2 eV), typical of hydrogenated nanocrystalline silicon. Adhesion of the films to the plastic substrate was good, as they survived bending to small radius of curvature (< 1 mm) without peeling. Structural, optical and transport properties were similar on films deposited both on PEN and on glass under the same deposition conditions.application/pdfengOptimization of deposition parameters for thin silicon films on flexible substrates in a hot-wire chemical vapor deposition reactorAlpuim, P.Ribeiro, M.Filonovich, SergejHostingInstitutionOrganizationalUniversidade do Minhoe-mailmailto:repositorium@usdb.uminho.ptrepositorium@usdb.uminho.ptISBNIsPartOf9780878494026ISSNIsPartOf0255-5476DOIIsPartOf10.4028/www.scientific.net/msf.514-516.4752006-09-15T09:52:25Z20062006-01-01T00:00:00ZHandlehttps://hdl.handle.net/1822/5554http://purl.org/coar/access_right/c_abf2open accessNanocrystalline siliconHot-wire CVDFlexible electronicsThin-film solar cell146231 bytesother research producthttp://purl.org/coar/resource_type/c_5794conference paperhttp://purl.org/coar/access_right/c_abf2application/pdffulltexthttps://prod-dspace.uminho.pt/bitstreams/9a57f8a1-7f99-44a9-9f24-c413161b93eb/download |
| spellingShingle | Optimization of deposition parameters for thin silicon films on flexible substrates in a hot-wire chemical vapor deposition reactor Alpuim, P. Nanocrystalline silicon Hot-wire CVD Flexible electronics Thin-film solar cell |
| status | SINGLETON |
| subject.fl_str_mv | Nanocrystalline silicon Hot-wire CVD Flexible electronics Thin-film solar cell |
| title | Optimization of deposition parameters for thin silicon films on flexible substrates in a hot-wire chemical vapor deposition reactor |
| title_full | Optimization of deposition parameters for thin silicon films on flexible substrates in a hot-wire chemical vapor deposition reactor |
| title_fullStr | Optimization of deposition parameters for thin silicon films on flexible substrates in a hot-wire chemical vapor deposition reactor |
| title_full_unstemmed | Optimization of deposition parameters for thin silicon films on flexible substrates in a hot-wire chemical vapor deposition reactor |
| title_short | Optimization of deposition parameters for thin silicon films on flexible substrates in a hot-wire chemical vapor deposition reactor |
| title_sort | Optimization of deposition parameters for thin silicon films on flexible substrates in a hot-wire chemical vapor deposition reactor |
| topic | Nanocrystalline silicon Hot-wire CVD Flexible electronics Thin-film solar cell |
| topic_facet | Nanocrystalline silicon Hot-wire CVD Flexible electronics Thin-film solar cell |
| url | https://hdl.handle.net/1822/5554 |
| visible | 1 |