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Photoluminescence of erbium doped microcrystalline silicon thin films produced by reactive magnetron sputtering

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Resumo:Microcrystalline silicon thin films doped with erbium were produced by RF sputtering and their structural, chemical and optical properties were studied by X-ray diffractometry at grazing incidence, Rutherford back scattering and optical transmission spectroscopy. The samples exhibit a sharp photoluminescence (PL) spectrum from the Er centres with the strongest peak positioned at 1.536 microm with a full width at half maximum of about 8 nm. When the temperature varies between 5K and 300K the photoluminescence decreases only five fold, in contrast to the behaviour reported for monocrystalline silicon.
Autores principais:Cerqueira, M. F.
Outros Autores:Stepikhova, M.; Ferreira, J. A.
Assunto:Photoluminescence Erbium Nanocrystalline silicon
Ano:2001
País:Portugal
Tipo de documento:artigo
Tipo de acesso:acesso aberto
Instituição associada:Universidade do Minho
Idioma:inglês
Origem:RepositóriUM - Universidade do Minho

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